TN

Tadashi Nishimura

Mitsubishi Electric: 49 patents #134 of 25,717Top 1%
KS Kobe Steel: 4 patents #205 of 2,031Top 15%
MM Mitsubishi Materials: 4 patents #258 of 1,543Top 20%
AT Agency Of Industrial Science And Technology: 3 patents #163 of 1,778Top 10%
MI Mitsui Petrochemical Industries: 1 patents #503 of 1,024Top 50%
TA Tdk Electronics Ag: 1 patents #234 of 503Top 50%
PA Panasonic: 1 patents #13,264 of 21,108Top 65%
AE Aida Engineering: 1 patents #83 of 163Top 55%
TO Toyota: 1 patents #15,335 of 26,838Top 60%
HT Hayashi Telempu: 1 patents #29 of 139Top 25%
IC Isel Co.: 1 patents #8 of 11Top 75%
MC Mitsubishi Chemical: 1 patents #1,511 of 3,022Top 50%
MK Mitsubishi Denki K.K.: 1 patents #164 of 577Top 30%
Overall (All Time): #31,188 of 4,157,543Top 1%
68
Patents All Time

Issued Patents All Time

Showing 51–68 of 68 patents

Patent #TitleCo-InventorsDate
4845537 Vertical type MOS transistor and method of formation thereof Kazuyuki Sugahara, Shigeru Kusunoki, Akihiko Ohsaki 1989-07-04
4822752 Process for producing single crystal semiconductor layer and semiconductor device produced by said process Kazuyuki Sugahara, Shigeru Kusunoki, Yasuo Inoue 1989-04-18
4822751 Method of producing a thin film semiconductor device Akira Ishizu, Yasuo Inoue 1989-04-18
4797723 Stacked semiconductor device Yoichi Akasaka 1989-01-10
4787740 Apparatus and method for determining crystal orientation Yasuo Inoue, Kazuyuki Sugahara, Shigeru Kusunoki 1988-11-29
4778269 Method for determining crystal orientation Yasuo Inoue, Kazuyuki Sugahara, Shigeru Kusunoki 1988-10-18
4714684 Method of forming single crystal layer on dielectric layer by controlled rapid heating Kazuyuki Sugahara, Shigeru Kusunoki, Yasuo Inoue 1987-12-22
4694143 Zone melting apparatus for monocrystallizing semiconductor layer on insulator layer Kazuyuki Sugahara, Shigeru Kusunoki, Yasuo Inoue 1987-09-15
4661167 Method for manufacturing a monocrystalline semiconductor device Shigeru Kusunoki, Kazuyuki Sugahara 1987-04-28
4523962 Method for fabricating monocrystalline semiconductor layer on insulating layer by laser crystallization using a grid of anti-reflection coating disposed on poly/amorphous semiconductor 1985-06-18
4514895 Method of forming field-effect transistors using selectively beam-crystallized polysilicon channel regions 1985-05-07
4465529 Method of producing semiconductor device Hideaki Arima, Masahiro Yoneda, Takaaki Fukumoto, Yoshihiro Hirata 1984-08-14
4425062 Cutting and chamfering apparatus for opposing ends of tubular material Teruaki Kawamura, Kazuo Akagi, Ryujiro Shitamatsu 1984-01-10
4414242 Process for fabricating a semiconductor device Yoji Mashiko 1983-11-08
4397328 Cleaning apparatus of tubular materials for use in pickling facilities for the same Yoshiro Tanaka, Hayato Moroi, Yukihiko Kamatsu, Kazuo Akagi, Ryujiro Shitamatsu 1983-08-09
4392267 Apparatus for continuously pickling the outer surfaces of tubular materials Yoshiro Tanaka, Hayato Moroi, Yukihiko Komatsu, Kazuo Akagi, Ryujiro Shitamatsu 1983-07-12
4392506 Apparatus for conveying tubular materials in pickling facilities of the same Yoshiro Tanaka, Hayato Moroi, Yukihiko Komatsu, Kazuo Akagi, Ryujiro Shitamatsu 1983-07-12
4367263 Magnetic recording medium Hiroshi Kawahara, Masatsugu Funakoshi, Masaharu Nishimatsu 1983-01-04