Issued Patents All Time
Showing 1–20 of 20 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12283483 | Sag nanowire growth with a planarization process | Geoffrey Charles Gardner, Sergei V. Gronin, Raymond Leonard Kallaher | 2025-04-22 |
| 12171147 | Semiconductor-superconductor hybrid device and its fabrication | Geoffrey Charles Gardner, Asbjørn Cennet Cliff Drachmann, Charles M. Marcus | 2024-12-17 |
| 12119224 | SAG nanowire growth with ion implantation | Geoffrey Charles Gardner, Sergei V. Gronin, Raymond Leonard Kallaher | 2024-10-15 |
| 12108688 | Forming semiconductor-superconductor hybrid devices with a horizontally-confined channel | Geoffrey Charles Gardner, Sergei V. Gronin, Flavio Griggio, Raymond Leonard Kallaher, Noah Seth Clay | 2024-10-01 |
| 11929253 | SAG nanowire growth with a planarization process | Geoffrey Charles Gardner, Sergei V. Gronin, Raymond Leonard Kallaher | 2024-03-12 |
| 11849639 | Forming semiconductor-superconductor hybrid devices with a horizontally-confined channel | Geoffrey Charles Gardner, Sergei V. Gronin, Flavio Griggio, Raymond Leonard Kallaher, Noah Seth Clay | 2023-12-19 |
| 11798988 | Graded planar buffer for nanowires | Geoffrey Charles Gardner, Sergei V. Gronin, Raymond Leonard Kallaher | 2023-10-24 |
| 11793089 | Durable hybrid heterostructures and methods for manufacturing the same | Candice THOMAS | 2023-10-17 |
| 11488822 | SAG nanowire growth with ion implantation | Geoffrey Charles Gardner, Sergei V. Gronin, Raymond Leonard Kallaher | 2022-11-01 |
| 11211543 | Semiconductor-superconductor hybrid device and its fabrication | Geoffrey Charles Gardner, Asbjørn Cennet Cliff Drachmann, Charles M. Marcus | 2021-12-28 |
| 11201273 | Semiconductor-superconductor heterostructure | Dmitry PIKULIN, Geoffrey Charles Gardner, Raymond Leonard Kallaher, Georg Wolfgang Winkler, Sergei V. Gronin +3 more | 2021-12-14 |
| 11127820 | Quantum well field-effect transistor and method for manufacturing the same | Candice THOMAS | 2021-09-21 |
| 7038300 | Apparatus with improved layers of group III-nitride semiconductor | Julia Wang-Ping Hsu | 2006-05-02 |
| 7001813 | Layers of group III-nitride semiconductor made by processes with multi-step epitaxial growths | Nils Weimann | 2006-02-21 |
| 6699760 | Method for growing layers of group III-nitride semiconductor having electrically passivated threading defects | Julia Hsu, Nils Weimann | 2004-03-02 |
| 6495409 | MOS transistor having aluminum nitride gate structure and method of manufacturing same | Loren N. Pfeiffer, Kenneth William West, Yiu-Huen Wong | 2002-12-17 |
| 6349454 | Method of making thin film resonator apparatus | Loren N. Pfeiffer, Kenneth William West, Yiu-Huen Wong | 2002-02-26 |
| 5411914 | III-V based integrated circuits having low temperature growth buffer or passivation layers | Chang-Lee Chen, Leonard Mahoney, Frank W. Smith, Arthur R. Calawa | 1995-05-02 |
| 4952527 | Method of making buffer layers for III-V devices using solid phase epitaxy | Arthur R. Calawa, Frank W. Smith, Chang-Lee Chen | 1990-08-28 |
| 4323422 | Method for preparing optically flat damage-free surfaces | Arthur R. Calawa, Joseph Gormley | 1982-04-06 |