| 12457911 |
Semiconductor-superconductor hybrid devices with a horizontally-confined channel and methods of forming the same |
Geoffrey Charles Gardner, Sergei V. Gronin, Flavio Griggio, Raymond Leonard Kallaher, Noah Seth Clay |
2025-10-28 |
|
| 12283483 |
Sag nanowire growth with a planarization process |
Geoffrey Charles Gardner, Sergei V. Gronin, Raymond Leonard Kallaher |
2025-04-22 |
|
| 12171147 |
Semiconductor-superconductor hybrid device and its fabrication |
Geoffrey Charles Gardner, Asbjørn Cennet Cliff Drachmann, Charles M. Marcus |
2024-12-17 |
$575,394,000 |
| 12119224 |
SAG nanowire growth with ion implantation |
Geoffrey Charles Gardner, Sergei V. Gronin, Raymond Leonard Kallaher |
2024-10-15 |
$379,667,000 |
| 12108688 |
Forming semiconductor-superconductor hybrid devices with a horizontally-confined channel |
Geoffrey Charles Gardner, Sergei V. Gronin, Flavio Griggio, Raymond Leonard Kallaher, Noah Seth Clay |
2024-10-01 |
$328,958,000 |
| 11929253 |
SAG nanowire growth with a planarization process |
Geoffrey Charles Gardner, Sergei V. Gronin, Raymond Leonard Kallaher |
2024-03-12 |
$658,169,000 |
| 11849639 |
Forming semiconductor-superconductor hybrid devices with a horizontally-confined channel |
Geoffrey Charles Gardner, Sergei V. Gronin, Flavio Griggio, Raymond Leonard Kallaher, Noah Seth Clay |
2023-12-19 |
$382,128,000 |
| 11798988 |
Graded planar buffer for nanowires |
Geoffrey Charles Gardner, Sergei V. Gronin, Raymond Leonard Kallaher |
2023-10-24 |
$295,109,000 |
| 11793089 |
Durable hybrid heterostructures and methods for manufacturing the same |
Candice THOMAS |
2023-10-17 |
$282,604,000 |
| 11488822 |
SAG nanowire growth with ion implantation |
Geoffrey Charles Gardner, Sergei V. Gronin, Raymond Leonard Kallaher |
2022-11-01 |
$193,551,000 |
| 11211543 |
Semiconductor-superconductor hybrid device and its fabrication |
Geoffrey Charles Gardner, Asbjørn Cennet Cliff Drachmann, Charles M. Marcus |
2021-12-28 |
$185,798,000 |
| 11201273 |
Semiconductor-superconductor heterostructure |
Dmitry PIKULIN, Geoffrey Charles Gardner, Raymond Leonard Kallaher, Georg Wolfgang Winkler, Sergei V. Gronin +3 more |
2021-12-14 |
$326,394,000 |
| 11127820 |
Quantum well field-effect transistor and method for manufacturing the same |
Candice THOMAS |
2021-09-21 |
$157,007,000 |
| 7038300 |
Apparatus with improved layers of group III-nitride semiconductor |
Julia Wang-Ping Hsu |
2006-05-02 |
$5,547,000 |
| 7001813 |
Layers of group III-nitride semiconductor made by processes with multi-step epitaxial growths |
Nils Weimann |
2006-02-21 |
$6,442,000 |
| 6699760 |
Method for growing layers of group III-nitride semiconductor having electrically passivated threading defects |
Julia Hsu, Nils Weimann |
2004-03-02 |
$24,172,000 |
| 6495409 |
MOS transistor having aluminum nitride gate structure and method of manufacturing same |
Loren N. Pfeiffer, Kenneth William West, Yiu-Huen Wong |
2002-12-17 |
|
| 6349454 |
Method of making thin film resonator apparatus |
Loren N. Pfeiffer, Kenneth William West, Yiu-Huen Wong |
2002-02-26 |
$10,523,000 |
| 5411914 |
III-V based integrated circuits having low temperature growth buffer or passivation layers |
Chang-Lee Chen, Leonard Mahoney, Frank W. Smith, Arthur R. Calawa |
1995-05-02 |
|
| 4952527 |
Method of making buffer layers for III-V devices using solid phase epitaxy |
Arthur R. Calawa, Frank W. Smith, Chang-Lee Chen |
1990-08-28 |
|
| 4323422 |
Method for preparing optically flat damage-free surfaces |
Arthur R. Calawa, Joseph Gormley |
1982-04-06 |
|
