Issued Patents All Time
Showing 25 most recent of 27 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9496304 | Image sensor pixel cell with switched deep trench isolation structure | Sing-Chung Hu, Gang Chen, Howard E. Rhodes, Sohei Manabe, Dyson H. Tai | 2016-11-15 |
| 9054007 | Image sensor pixel cell with switched deep trench isolation structure | Sing-Chung Hu, Gang Chen, Howard E. Rhodes, Sohei Manabe, Hsin-Chih Tai | 2015-06-09 |
| 8946795 | Backside-illuminated (BSI) image sensor with reduced blooming and electrical shutter | Gang Chen, Sing-Chung Hu, Duli Mao, Hsin-Chih Tai, Yin Qian +2 more | 2015-02-03 |
| 8330195 | Multilayer image sensor pixel structure for reducing crosstalk | Vincent Venezia, Ashish Shah, Duli Mao, Yin Qian, Hsin-Chih Tai +1 more | 2012-12-11 |
| 8273619 | Methods of implanting dopant into channel regions | Hongmei Wang, Kurt D. Beigel, Fred Fishburn | 2012-09-25 |
| 8253178 | CMOS image sensor with peripheral trench capacitor | Zhiqiang Lin | 2012-08-28 |
| 7875918 | Multilayer image sensor pixel structure for reducing crosstalk | Vincent Venezia, Ashish Shah, Duli Mao, Yin Qian, Hsin-Chih Tai +1 more | 2011-01-25 |
| 7767514 | Methods of implanting dopant into channel regions | Hongmei Wang, Kurt D. Beigel, Fred Fishburn | 2010-08-03 |
| 7674670 | Methods of forming threshold voltage implant regions | Hongmei Wang, Kurt D. Beigel, Fred Fishburn | 2010-03-09 |
| 7638392 | Methods of forming capacitor structures | Hongmei Wang, Kurt D. Beigel, Fred Fishburn | 2009-12-29 |
| 7442600 | Methods of forming threshold voltage implant regions | Hongmei Wang, Kurt D. Beigel, Fred Fishburn | 2008-10-28 |
| 7259442 | Selectively doped trench device isolation | David Y. Kao | 2007-08-21 |
| 7157324 | Transistor structure having reduced transistor leakage attributes | Vishnu K. Agarwal, Fred Fishburn, Howard E. Rhodes, Jeffrey McKee | 2007-01-02 |
| 7105899 | Transistor structure having reduced transistor leakage attributes | Vishnu K. Agarwal, Fred Fishburn, Howard E. Rhodes, Jeffrey McKee | 2006-09-12 |
| 6815287 | Localized array threshold voltage implant to enhance charge storage within DRAM memory cells | Howard E. Rhodes | 2004-11-09 |
| 6800520 | Localized array threshold voltage implant enhance charge storage within DRAM memory cells | Howard E. Rhodes | 2004-10-05 |
| 6781212 | Selectively doped trench device isolation | David Y. Kao | 2004-08-24 |
| 6744102 | MOS transistors with nitrogen in the gate oxide of the p-channel transistor | Jigish Trivedi, Zhongze Wang | 2004-06-01 |
| 6630706 | Localized array threshold voltage implant to enhance charge storage within DRAM memory cells | Howard E. Rhodes | 2003-10-07 |
| 6541395 | Semiconductor processing method of forming field effect transistors | Jigish Trivedi, Zhongze Wang | 2003-04-01 |
| 6503805 | Channel implant through gate polysilicon | Zhongze Wang | 2003-01-07 |
| 6417546 | P-type FET in a CMOS with nitrogen atoms in the gate dielectric | Jigish Trivedi, Zhongze Wang | 2002-07-09 |
| 6215151 | Methods of forming integrated circuitry and integrated circuitry | Zhiqiang Wu, Luan C. Tran, Robert Kerr, Shubneesh Batra | 2001-04-10 |
| 6162693 | Channel implant through gate polysilicon | Zhongze Wang | 2000-12-19 |
| 6093661 | Integrated circuitry and semiconductor processing method of forming field effect transistors | Jigish Trivedi, Zhongze Wang | 2000-07-25 |