| 10811233 |
Process chamber having tunable showerhead and tunable liner |
Andrew Nguyen, Xue Yang Chang, Haitao Wang, Reza Sadjadi |
2020-10-20 |
| 7470628 |
Etching methods |
— |
2008-12-30 |
| 7319075 |
Etchant with selectivity for doped silicon dioxide over undoped silicon dioxide and silicon nitride, processes which employ the etchant, and structures formed thereby |
Li Li, Guy T. Blalock |
2008-01-15 |
| 7273566 |
Gas compositions |
— |
2007-09-25 |
| 7173339 |
Semiconductor device having a substrate an undoped silicon oxide structure and an overlaying doped silicon oxide structure with a sidewall terminating at the undoped silicon oxide structure |
Li Li, Guy T. Blalock |
2007-02-06 |
| 7094700 |
Plasma etching methods and methods of forming memory devices comprising a chalcogenide comprising layer received operably proximate conductive electrodes |
Li Li, Terry L. Gilton, John T. Moore, Karen Signorini |
2006-08-22 |
| 6989108 |
Etchant gas composition |
— |
2006-01-24 |
| 6967408 |
Gate stack structure |
— |
2005-11-22 |
| 6875371 |
Etchant with selectivity for doped silicon dioxide over undoped silicon dioxide and silicon nitride, processes which employ the etchant, and structures formed thereby |
Li Li, Guy T. Blalock |
2005-04-05 |
| 6849557 |
Undoped silicon dioxide as etch stop for selective etch of doped silicon dioxide |
— |
2005-02-01 |
| 6831019 |
Plasma etching methods and methods of forming memory devices comprising a chalcogenide comprising layer received operably proximate conductive electrodes |
Li Li, Terry L. Gilton, John T. Moore, Karen Signorini |
2004-12-14 |
| 6716766 |
Process variation resistant self aligned contact etch |
— |
2004-04-06 |
| 6551940 |
Undoped silicon dioxide as etch mask for patterning of doped silicon dioxide |
— |
2003-04-22 |
| 6537922 |
Etchant with selectivity for doped silicon dioxide over undoped silicon dioxide and silicon nitride, processes which employ the etchant, and structures formed thereby |
Li Li, Guy T. Blalock |
2003-03-25 |
| 6479864 |
Semiconductor structure having a plurality of gate stacks |
— |
2002-11-12 |
| 6458685 |
Method of forming a self-aligned contact opening |
Dave Pecora |
2002-10-01 |
| 6444586 |
Method of etching doped silicon dioxide with selectivity to undoped silicon dioxide with a high density plasma etcher |
— |
2002-09-03 |
| 6432833 |
Method of forming a self aligned contact opening |
— |
2002-08-13 |
| 6337285 |
Self-aligned contact (SAC) etch with dual-chemistry process |
— |
2002-01-08 |
| 6277758 |
Method of etching doped silicon dioxide with selectivity to undoped silicon dioxide with a high density plasma etcher |
— |
2001-08-21 |
| 6121671 |
Semiconductor device having a substrate, an undoped silicon oxide structure, and an overlying doped silicon oxide structure with a side wall terminating at the undoped silicon oxide structure |
Li Li, Guy T. Blalock |
2000-09-19 |
| 6117788 |
Semiconductor etching methods |
— |
2000-09-12 |
| 6117791 |
Etchant with selectivity for doped silicon dioxide over undoped silicon dioxide and silicon nitride, processes which employ the etchant, and structures formed thereby |
Li Li, Guy T. Blalock |
2000-09-12 |
| 5399900 |
Isolation region in a group III-V semiconductor device and method of making the same |
Samuel Chen, Shuit-Tong Lee |
1995-03-21 |
