Issued Patents All Time
Showing 26–50 of 51 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6908569 | Ruthenium silicide wet etch | Michael T. Andreas | 2005-06-21 |
| 6894306 | Field emission device having a covering comprising aluminum nitride | Richard H. Lane | 2005-05-17 |
| 6867449 | Capacitor having RuSixOy-containing adhesion layers | Eugene P. Marsh | 2005-03-15 |
| 6867093 | Process for fabricating RuSixOy-containing adhesion layers | Eugene P. Marsh | 2005-03-15 |
| 6835975 | DRAM circuitry having storage capacitors which include capacitor dielectric regions comprising aluminum nitride | Richard H. Lane | 2004-12-28 |
| 6812990 | Method for making sol gel spacers for flat panel displays | James J. Hofmann, Brian A. Vaartstra, Donald L. Westmoreland | 2004-11-02 |
| 6812139 | Method for metal fill by treatment of mobility layers | John H. Givens, Russell C. Zahorik | 2004-11-02 |
| 6800937 | RuSixOy-containing adhesion layers and process for fabricating the same | Eugene P. Marsh | 2004-10-05 |
| 6773980 | Methods of forming a field emission device | Richard H. Lane | 2004-08-10 |
| 6764895 | Process for fabricating RuSixOy-containing adhesion layers | Eugene P. Marsh | 2004-07-20 |
| 6740252 | Ruthenium silicide wet etch | Michael T. Andreas | 2004-05-25 |
| 6737317 | Method of manufacturing a capacitor having RuSixOy-containing adhesion layers | Eugene P. Marsh | 2004-05-18 |
| 6737313 | Surface treatment of an oxide layer to enhance adhesion of a ruthenium metal layer | Eugene P. Marsh | 2004-05-18 |
| 6617634 | RuSixOy-containing adhesion layers and process for fabricating the same | Eugene P. Marsh | 2003-09-09 |
| 6610568 | Process for fabricating RuSixOy-containing adhesion layers | Eugene P. Marsh | 2003-08-26 |
| 6548405 | Batch processing for semiconductor wafers to form aluminum nitride and titanium aluminum nitride | John T. Moore, Scott DeBoer | 2003-04-15 |
| 6498110 | Ruthenium silicide wet etch | Michael T. Andreas | 2002-12-24 |
| 6482735 | Method for improved metal fill by treatment of mobility layers | John H. Givens, Russell C. Zahorik | 2002-11-19 |
| 6461909 | Process for fabricating RuSixOy-containing adhesion layers | Eugene P. Marsh | 2002-10-08 |
| 6462367 | RuSixOy-containing adhesion layers | Eugene P. Marsh | 2002-10-08 |
| 6376305 | Method of forming DRAM circuitry, DRAM circuitry, method of forming a field emission device, and field emission device | Richard H. Lane | 2002-04-23 |
| 6365519 | Batch processing for semiconductor wafers to form aluminum nitride and titanium aluminum nitride | John T. Moore, Scott DeBoer | 2002-04-02 |
| 6352944 | Method of depositing an aluminum nitride comprising layer over a semiconductor substrate | Richard H. Lane | 2002-03-05 |
| 6218293 | Batch processing for semiconductor wafers to form aluminum nitride and titanium aluminum nitride | John T. Moore, Scott DeBoer | 2001-04-17 |
| 6057231 | Method for improved metal fill by treatment of mobility layers | John H. Givens, Russell C. Zahorik | 2000-05-02 |