AM

Andrei Mihnea

Micron: 59 patents #288 of 6,345Top 5%
S3 Sandisk 3D: 12 patents #39 of 180Top 25%
ST Sandisk Technologies: 2 patents #967 of 2,224Top 45%
CS Catalyst Semiconductor: 1 patents #21 of 41Top 55%
IN Intel: 1 patents #18,218 of 30,777Top 60%
📍 San Jose, CA: #463 of 32,062 inventorsTop 2%
🗺 California: #3,836 of 386,348 inventorsTop 1%
Overall (All Time): #25,820 of 4,157,543Top 1%
75
Patents All Time

Issued Patents All Time

Showing 51–75 of 75 patents

Patent #TitleCo-InventorsDate
7075831 Method for erasing an NROM cell Chun-Ming Chen 2006-07-11
7075832 Method for erasing an NROM cell Chun-Ming Chen 2006-07-11
7068543 Flash memory Chun-Ming Chen 2006-06-27
7057932 Flash memory Chun-Ming Chen 2006-06-06
7046557 Flash memory Chun-Ming Chen 2006-05-16
6984547 Contactless uniform-tunneling separate p-well (cusp) non-volatile memory array architecture, fabrication and operation Chun-Ming Chen, Kirk D. Prall 2006-01-10
6930350 Contactless uniform-tunneling separate p-well (CUSP) non-volatile memory array architecture, fabrication and operation Chun-Ming Chen, Kirk D. Prall 2005-08-16
6873550 Method for programming and erasing an NROM cell 2005-03-29
6798694 Method for reducing drain disturb in programming Vinod Lakhani 2004-09-28
6798699 Flash memory device and method of erasing Chun-Ming Chen, Paul Rudeck, Andrew Bicksler 2004-09-28
6795348 Method and apparatus for erasing flash memory Chun-Ming Chen 2004-09-21
6684173 System and method of testing non-volatile memory cells Jeffrey Kessenich, Devin M. Batutis 2004-01-27
6649453 Contactless uniform-tunneling separate p-well (CUSP) non-volatile memory array architecture, fabrication and operation Chun-Ming Chen, Kirk D. Prall 2003-11-18
6587376 Flash memory cell for high efficiency programming Paul Rudeck, Chun-Ming Chen 2003-07-01
6577537 Flash memory cell for high efficiency programming Paul Rudeck, Chun-Ming Chen 2003-06-10
6563741 Flash memory device and method of erasing Chun-Ming Chen, Paul Rudeck, Andrew Bicksler 2003-05-13
6493280 Method of reducing trapped holes induced by erase operations in the tunnel oxide of flash memory cells Jeffrey Kessenich, Chun-Ming Chen 2002-12-10
6449189 Flash memory cell for high efficiency programming Paul Rudeck, Chun-Ming Chen 2002-09-10
6445619 Flash memory cell for high efficiency programming Paul Rudeck, Chun-Ming Chen 2002-09-03
6445620 Flash memory cell for high efficiency programming Paul Rudeck, Chun-Ming Chen 2002-09-03
6434045 Flash memory cell for high efficiency programming Paul Rudeck, Chun-Ming Chen 2002-08-13
6426898 Method of reducing trapped holes induced by erase operations in the tunnel oxide of flash memory cells Jeffrey Kessenich, Chun-Ming Chen 2002-07-30
6384447 Flash memory cell for high efficiency programming Paul Rudeck, Chun-Ming Chen 2002-05-07
6272047 Flash memory cell Paul Rudeck, Chun-Ming Chen 2001-08-07
5793079 Single transistor non-volatile electrically alterable semiconductor memory device Sorin S. Georgescu, Radu Vanco 1998-08-11