| 12154622 |
ReRAM memory array that includes ReRAM memory cells having a ReRAM device and two series-connected select transistors that can be selected for erasing |
Victor Nguyen, Fethi Dhaoui, John McCollum |
2024-11-26 |
| 11355187 |
Method for erasing a ReRAM memory cell |
Victor Nguyen, Fethi Dhaoui, John McCollum |
2022-06-07 |
| 11031078 |
SEU stabilized memory cells |
Fethi Dhaoui, Pavan Singaraju, Victor Nguyen, John McCollum, Volker Hecht |
2021-06-08 |
| 10910050 |
ReRAM memory cell having dual word line control |
Victor Nguyen, Fethi Dhaoui, John McCollum |
2021-02-02 |
| 10878905 |
Metal filament ReRAM cell with current limiting during program and erase |
John McCollum |
2020-12-29 |
| 10872661 |
ReRAM programming method including low-current pre-programming for program time reduction |
Fethi Dhaoui, Victor Nguyen, John McCollum |
2020-12-22 |
| 9755072 |
High voltage device fabricated using low-voltage processes |
Fethi Dhaoui, John McCollum |
2017-09-05 |
| 9368623 |
High voltage device fabricated using low-voltage processes |
Fethi Dhaoui, John McCollum |
2016-06-14 |