YO

Yukihito Oowaki

KT Kabushiki Kaisha Toshiba: 79 patents #137 of 21,451Top 1%
Overall (All Time): #23,364 of 4,157,543Top 1%
79
Patents All Time

Issued Patents All Time

Showing 51–75 of 79 patents

Patent #TitleCo-InventorsDate
5892724 NAND-type dynamic RAM having temporary storage register and sense amplifier coupled to multi-open bit lines Takehiro Hasegawa, Fujio Masuoka, Ryu Ogiwara, Shinichiro Shiratake, Shigeyoshi Watanabe 1999-04-06
5892247 Semiconductor device and a manufacturing method thereof Mitsuhiro Noguchi, Tohru Maruyama 1999-04-06
5870339 MOS semiconductor device with memory cells each having storage capacitor and transfer transistor Daisuke Kato, Daisaburo Takashima 1999-02-09
5867040 Integrated circuit with stacked sub-circuits between Vcc and ground so as to conserve power and reduce the voltage across any one transistor Tsuneaki Fuse 1999-02-02
5864508 Dynamic random-access memory with high-speed word-line driver circuit Daisaburo Takashima, Kenji Tsuchida, Masako Ohta 1999-01-26
5859805 Dynamic semiconductor memory device having an improved sense amplifier layout arrangement Daisaburo Takashima, Kenji Tsuchida 1999-01-12
5838038 Dynamic random access memory device with the combined open/folded bit-line pair arrangement Daisaburo Takashima, Shigeyoshi Watanabe, Tohru Ozaki, Takeshi Hamamoto 1998-11-17
5831928 Semiconductor memory device including a plurality of dynamic memory cells connected in series Hiroaki Nakano, Takehiro Hasegawa 1998-11-03
5761109 Semiconductor memory device having folded bit line array and an open bit line array with imbalance correction Daisaburo Takashima, Tsuneo Inaba, Takashi Ohsawa, Shinichiro Shiratake 1998-06-02
5717625 Semiconductor memory device Takehiro Hasegawa, Shigeyoshi Watanabe, Ken Maeda, Mitsuo Saito, Masako Yoshida +2 more 1998-02-10
5684746 Semiconductor memory device in which a failed memory cell is placed with another memory cell Ryo Fukuda 1997-11-04
5661678 Semiconductor memory device using dynamic type memory cells Masako Yoshida, Takehiro Hasegawa, Kiyofumi Ochii, Masayuki Koizumi 1997-08-26
5654912 Semiconductor memory device with reduced read time and power consumption Takehiro Hasegawa, Hitoshi Kuyama 1997-08-05
5644525 Dynamic semiconductor memory device having an improved sense amplifier layout arrangement Daisaburo Takashima, Kenji Tsuchida 1997-07-01
5638329 MOS semiconductor device with memory cells each having storage capacitor and transfer transistor Daisuke Kato, Daisaburo Takashima 1997-06-10
5625602 NAND-type dynamic RAM having temporary storage register and sense amplifier coupled to multi-open bit lines Takehiro Hasegawa, Fujio Masuoka, Ryu Ogiwara, Shinichiro Shiratake, Shigeyoshi Watanabe 1997-04-29
5590080 Dynamic random access memory with variable sense-amplifier drive capacity Takehiro Hasagawa 1996-12-31
5499209 Integrated semiconductor memory with internal voltage booster of lesser dependency on power supply voltage Daisaburo Takashima, Masako Ohta 1996-03-12
5497351 Random access memory with divided memory banks and data read/write architecture therefor 1996-03-05
5463577 Semiconductor memory Takehiro Hasegawa 1995-10-31
5426604 MOS semiconductor device with memory cells each having storage capacitor and transfer transistor Daisuke Kato, Daisaburo Takashima 1995-06-20
5307315 Integrated semiconductor memory with internal voltage booster of lesser dependency on power supply voltage Daisaburo Takashima, Masako Ohta 1994-04-26
5299154 MOS semiconductor device with memory cells each having storage capacitor and transfer transistor Daisuke Kato, Daisaburo Takashima 1994-03-29
5222038 Dynamic random access memory with enhanced sense-amplifier circuit Kenji Tsuchida, Daisaburo Takashima 1993-06-22
5144583 Dynamic semiconductor memory device with twisted bit-line structure Kenji Tsuchida, Daisaburo Takashima 1992-09-01