Issued Patents All Time
Showing 26–50 of 64 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8168499 | Semiconductor device and method for manufacturing the same | Masato Koyama, Seiji Inumiya | 2012-05-01 |
| 8148787 | Semiconductor device and method for manufacturing the same | Masato Koyama, Akira Nishiyama, Reika Ichihara | 2012-04-03 |
| 8129792 | Semiconductor device and method for manufacturing the same | Reika Ichihara, Hiroki Tanaka, Masahiko Yoshiki, Masato Koyama | 2012-03-06 |
| 8120117 | Semiconductor device with metal gate | — | 2012-02-21 |
| 8053300 | Semiconductor device | Reika Ichihara, Masato Koyama, Akira Nishiyama | 2011-11-08 |
| 7986014 | Semiconductor device | Reika Ichihara, Masato Koyama, Akira Nishiyama | 2011-07-26 |
| 7977182 | Method of manufacturing MISFET with low contact resistance | Yoshifumi Nishi, Takashi Yamauchi, Junji Koga | 2011-07-12 |
| 7964489 | Semiconductor device | Masato Koyama, Yuuichi Kamimuta, Reika Ichihara, Katsuyuki Sekine | 2011-06-21 |
| 7902612 | Semiconductor device and method of manufacturing the same | Takashi Yamauchi, Atsuhiro Kinoshita, Junji Koga, Koichi Kato, Nobutoshi Aoki +1 more | 2011-03-08 |
| 7863695 | Complementary MISFET semiconductor device having an atomic density ratio aluminum/lanthanum (Al/La) in the gate insulating layer of PMIS is larger than that of the NMIS | Masamichi Suzuki, Masato Koyama, Hirotaka Nishino, Reika Ichihara, Akira Takashima | 2011-01-04 |
| 7807990 | Semiconductor device | Masato Koyama, Yuuichi Kamimuta, Reika Ichihara, Katsuyuki Sekine | 2010-10-05 |
| 7807538 | Method of forming a silicide layer while applying a compressive or tensile strain to impurity layers | Takashi Yamauchi, Atsuhiro Kinoshita, Junji Koga | 2010-10-05 |
| 7768077 | Semiconductor device and method for manufacturing the same | Masato Koyama, Masahiko Yoshiki | 2010-08-03 |
| 7763946 | Semiconductor device and method for manufacturing the same | Masato Koyama | 2010-07-27 |
| 7745888 | Method of making p-channel and n-channel MIS transistors using single film formation of TaC | Masato Koyama, Reika Ichihara, Yuuichi Kamimuta, Akira Nishiyama | 2010-06-29 |
| 7737503 | Semiconductor device and method for manufacturing the same | Masato Koyama, Masahiko Yoshiki | 2010-06-15 |
| 7728394 | Semiconductor device and manufacturing method thereof | Masato Koyama, Reika Ichihara, Yuuichi Kamimuta, Akira Nishiyama | 2010-06-01 |
| 7727832 | Semiconductor device and method for manufacturing the same | Masato Koyama, Seiji Inumiya | 2010-06-01 |
| 7718521 | Semiconductor device and method for manufacturing the same | Masato Koyama, Akira Nishiyama, Reika Ichihara | 2010-05-18 |
| 7667273 | Semiconductor device and method for manufacturing the same | Masato Koyama | 2010-02-23 |
| 7642165 | Semiconductor device and fabrication method thereof | Masao Shingu, Atsuhiro Kinoshita | 2010-01-05 |
| 7642604 | Semiconductor device and fabrication method of same | Yoshifumi Nishi, Takashi Yamauchi, Junji Koga | 2010-01-05 |
| 7632728 | Method of forming TaC gate electrodes with crystal orientation ratio defining the work function | Masato Koyama, Reika Ichihara, Yuuichi Kamimuta, Akira Nishiyama | 2009-12-15 |
| 7612413 | Semiconductor device and manufacturing method thereof | Masato Koyama, Reika Ichihara, Yuuichi Kamimuta, Akira Nishiyama | 2009-11-03 |
| 7608896 | Semiconductor device | Reika Ichihara, Hiroki Tanaka, Masato Koyama | 2009-10-27 |