Issued Patents All Time
Showing 51–62 of 62 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 5585651 | Insulated-gate semiconductor device having high breakdown voltages | Mitsuhiko Kitagawa, Ichiro Omura, Akio Nakagawa, Tomoki Inoue | 1996-12-17 |
| 5536961 | High breakdown voltage semiconductor device | Akio Nakagawa, Tomoko Matsudai | 1996-07-16 |
| 5463231 | Method of operating thyristor with insulated gates | Tsuneo Ogura, Kiminori Watanabe, Akio Nakagawa, Yoshihiro Yamaguchi, Tomoko Matsudai +2 more | 1995-10-31 |
| 5448083 | Insulated-gate semiconductor device | Mitsuhiko Kitagawa, Ichiro Omura, Akio Nakagawa, Tomoki Inoue | 1995-09-05 |
| 5438220 | High breakdown voltage semiconductor device | Akio Nakagawa, Tomoko Matsudai, Yoshihiro Yamaguchi, Ichiro Omura, Hideyuki Funaki | 1995-08-01 |
| 5434444 | High breakdown voltage semiconductor device | Akio Nakagawa, Tomoko Matsudai | 1995-07-18 |
| 5428228 | Method of operating thyristor with insulated gates | Tsuneo Ogura, Kiminori Watanabe, Akio Nakagawa, Yoshihiro Yamaguchi, Tomoko Matsudai +2 more | 1995-06-27 |
| 5378920 | High breakdown voltage semiconductor device | Akio Nakagawa | 1995-01-03 |
| 5343067 | High breakdown voltage semiconductor device | Akio Nakagawa, Tomoko Matsudai | 1994-08-30 |
| 5315134 | Thyristor with insulated gate | Tsuneo Ogura, Kiminori Watanabe, Akio Nakagawa, Yoshihiro Yamaguchi, Tomoko Matsudai | 1994-05-24 |
| 5294825 | High breakdown voltage semiconductor device | Akio Nakagawa | 1994-03-15 |
| 5241210 | High breakdown voltage semiconductor device | Akio Nakagawa | 1993-08-31 |