Issued Patents All Time
Showing 26–50 of 62 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 7692242 | Semiconductor device used as high-speed switching device and power device | Tomoko Matsudai, Yusuke Kawaguchi, Kenichi Matsushita | 2010-04-06 |
| 7663186 | Semiconductor device | Syotaro Ono, Yoshihiro Yamaguchi, Yusuke Kawaguchi, Kazutoshi Nakamura, Kenichi Matsushita +2 more | 2010-02-16 |
| 7646059 | Semiconductor device including field effect transistor for use as a high-speed switching device and a power device | Yusuke Kawaguchi, Tomoko Matsudai, Kenichi Matsushita | 2010-01-12 |
| 7589389 | Semiconductor device and method of manufacturing the same | Tomoko Matsudai | 2009-09-15 |
| 7579669 | Semiconductor device including power MOS field-effect transistor and driver circuit driving thereof | Kazutoshi Nakamura, Tomoko Matsudai, Kenichi Matsushita, Akio Nakagawa | 2009-08-25 |
| 7473978 | Semiconductor device and method of manufacturing the same | Tomoko Matsudai | 2009-01-06 |
| 7138698 | Semiconductor device including power MOS field-effect transistor and driver circuit driving thereof | Kazutoshi Nakamura, Tomoko Matsudai, Kenichi Matsushita, Akio Nakagawa | 2006-11-21 |
| 7067876 | Semiconductor device | Kazutoshi Nakamura, Yusuke Kawaguchi | 2006-06-27 |
| 7061060 | Offset-gate-type semiconductor device | Syotaro Ono, Kazutoshi Nakamura, Yusuke Kawaguchi, Shinichi Hodama, Akio Nakagawa | 2006-06-13 |
| 7061048 | Power MOSFET device | Yusuke Kawaguchi, Syotaro Ono, Shinichi Hodama, Akio Nakagawa | 2006-06-13 |
| 7026214 | Offset-gate-type semiconductor device | Syotaro Ono, Kazutoshi Nakamura, Yusuke Kawaguchi, Shinichi Hodama, Akio Nakagawa | 2006-04-11 |
| 6878992 | Vertical-type power MOSFET with a gate formed in a trench | Yusuke Kawaguchi, Kazutoshi Nakamura, Akio Nakagawa, Syotaro Ono | 2005-04-12 |
| 6864533 | MOS field effect transistor with reduced on-resistance | Akio Nakagawa, Yusuke Kawaguchi, Kazutoshi Nakamura | 2005-03-08 |
| 6720618 | Power MOSFET device | Yusuke Kawaguchi, Syotaro Ono, Shinichi Hodama, Akio Nakagawa | 2004-04-13 |
| 6552389 | Offset-gate-type semiconductor device | Syotaro Ono, Kazutoshi Nakamura, Yusuke Kawaguchi, Shinichi Hodama, Akio Nakagawa | 2003-04-22 |
| 6353252 | High breakdown voltage semiconductor device having trenched film connected to electrodes | Kazutoshi Nakamura, Yusuke Kawaguchi | 2002-03-05 |
| 6163051 | High breakdown voltage semiconductor device | Akio Nakagawa, Tomoko Matsudai, Hideyuki Funaki | 2000-12-19 |
| 6064086 | Semiconductor device having lateral IGBT | Akio Nakagawa, Tomoko Matsudai, Hideyuki Funaki | 2000-05-16 |
| 5985708 | Method of manufacturing vertical power device | Akio Nakagawa, Naoharu Sugiyama, Tomoko Matsudai, Atsusi Kurobe, Hideyuki Funaki +2 more | 1999-11-16 |
| 5894164 | High voltage semiconductor device | Hideyuki Funaki, Akio Nakagawa, Yoshinori Terazaki | 1999-04-13 |
| 5838026 | Insulated-gate semiconductor device | Mitsuhiko Kitagawa, Ichiro Omura, Akio Nakagawa, Tomoki Inoue | 1998-11-17 |
| 5751022 | Thyristor | Akio Nakagawa, Tomoko Matsudai, Hideyuki Funaki | 1998-05-12 |
| 5689121 | Insulated-gate semiconductor device | Mitsuhiko Kitagawa, Ichiro Omura, Akio Nakagawa, Tomoki Inoue | 1997-11-18 |
| 5640040 | High breakdown voltage semiconductor device | Akio Nakagawa, Tomoko Matsudai, Yoshihiro Yamaguchi, Ichiro Omura, Hideyuki Funaki | 1997-06-17 |
| 5592014 | High breakdown voltage semiconductor device | Hideyuki Funaki, Akio Nakagawa, Tomoko Matsudai, Yoshihiro Yamaguchi, Ichiro Omura | 1997-01-07 |