Issued Patents All Time
Showing 51–73 of 73 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6147364 | Compound semiconductor device formed of nitrogen-containing gallium compound such as gan, algan or ingan | Hidetoshi Fujimoto, Johji Nishio, Mariko Suzuki, Lisa Sugiura | 2000-11-14 |
| 6067309 | Compound semiconductor light-emitting device of gallium nitride series | Masaaki Onomura, Genichi Hatakoshi | 2000-05-23 |
| 5998810 | Semiconductor light-emitting diode having a p-type semiconductor layer formed on a light-emitting layer | Ako Hatano, Yasuo Ohba, Hidetoshi Fujimoto, Johji Nishio | 1999-12-07 |
| 5932896 | Nitride system semiconductor device with oxygen | Lisa Sugiura, Mariko Suzuki, Hidetoshi Fujimoto, Johji Nishio, John Rennie +1 more | 1999-08-03 |
| 5903017 | Compound semiconductor device formed of nitrogen-containing gallium compound such as GaN, AlGaN or InGaN | Hidetoshi Fujimoto, Johji Nishio, Mariko Suzuki, Lisa Sugiura | 1999-05-11 |
| 5786606 | Semiconductor light-emitting device | Johji Nishio, Hidetoshi Fujimoto | 1998-07-28 |
| 5780873 | Semiconductor device capable of easily forming cavity and its manufacturing method | Masahiro Yamamoto, Masaaki Onomura, Hidetoshi Fujimoto, Genichi Hatakoshi, Hideto Sugawara +3 more | 1998-07-14 |
| 5740192 | Semiconductor laser | Ako Hatano, Yasuo Ohba, Hidetoshi Fujimoto, Johji Nishio | 1998-04-14 |
| 5466950 | Semiconductor light emitting device with short wavelength light selecting means | Hideto Sugawara | 1995-11-14 |
| 5459746 | Surface emission type semiconductor light-emitting device | Hideto Sugawara | 1995-10-17 |
| 5410159 | Light-emitting diode | Hideto Sugawara | 1995-04-25 |
| 5389800 | Semiconductor light-emitting device | Genichi Hatakoshi | 1995-02-14 |
| 5343486 | Semiconductor laser device | Genichi Hatakoshi, Koichi Nitta | 1994-08-30 |
| 5321712 | Semiconductor light-emitting device having a cladding layer composed of an InGaAlp-based compound | Koichi Nitta, Genichi Hatakoshi, Yukie Nishikawa, Hideto Sugawara, Mariko Suzuki | 1994-06-14 |
| 5305341 | Semiconductor laser whose active layer has an ordered structure | Yukie Nishikawa, Koichi Nitta, Genichi Hatakoshi, Masaki Okajima, Minoru Watanabe | 1994-04-19 |
| 5282218 | Semiconductor laser device | Masaki Okajima, Koichi Nitta, Genichi Hatakoshi, Yukie Nishikawa | 1994-01-25 |
| 5181218 | Manufacturing method of semiconductor laser with non-absorbing mirror structure | Masayuki Ishikawa, Hajime OKUDA, Hideo Shiozawa, Yukio Watanabe, Mariko Suzuki +1 more | 1993-01-19 |
| 5153889 | Semiconductor light emitting device | Hideto Sugawara, Masayuki Ishikawa, Yoshihiro Kokubun, Yukie Nishikawa, Shigeya Naritsuka +2 more | 1992-10-06 |
| 5138404 | Semiconductor device for passing current between a GaAs layer and an InGaAlP layer | Masayuki Ishikawa, Genichi Hatakoshi | 1992-08-11 |
| 5036521 | Semiconductor laser device | Genichi Hatakoshi, Shigeya Naritsuka, Masayuki Ishikawa, Hajime OKUDA, Hideo Shiozawa +4 more | 1991-07-30 |
| 5023880 | Semiconductor laser device | Mariko Suzuki, Masayuki Ishikawa, Yukio Watanabe, Genichi Hatakoshi | 1991-06-11 |
| 4987096 | Manufacturing method of semiconductor laser with non-absorbing mirror structure | Masayuki Ishikawa, Hajime OKUDA, Hideo Shiozawa, Yukio Watanabe, Mariko Suzuki +1 more | 1991-01-22 |
| 4893313 | Semiconductor laser device which has a double-hetero structure having an optimal layer thickness | Genichi Hatakoshi, Shigeya Naritsuka, Masayuki Ishikawa, Hajime OKUDA, Hideo Shiozawa +4 more | 1990-01-09 |