Issued Patents All Time
Showing 1–16 of 16 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| RE38805 | Semiconductor device and method of fabricating the same | Yasuo Ohba | 2005-10-04 |
| 5998810 | Semiconductor light-emitting diode having a p-type semiconductor layer formed on a light-emitting layer | Yasuo Ohba, Hidetoshi Fujimoto, Kazuhiko Itaya, Johji Nishio | 1999-12-07 |
| 5929466 | Semiconductor device and method of fabricating the same | Yasuo Ohba | 1999-07-27 |
| 5909040 | Semiconductor device including quaternary buffer layer with pinholes | Yasuo Ohba | 1999-06-01 |
| 5740192 | Semiconductor laser | Yasuo Ohba, Hidetoshi Fujimoto, Kazuhiko Itaya, Johji Nishio | 1998-04-14 |
| 5656832 | Semiconductor heterojunction device with ALN buffer layer of 3nm-10nm average film thickness | Yasuo Ohba | 1997-08-12 |
| 5617438 | Semiconductor laser and method for manufacturing the same | Yasuo Ohba | 1997-04-01 |
| 5432808 | Compound semicondutor light-emitting device | Yasuo Ohba | 1995-07-11 |
| 5317167 | Semiconductor light-emitting device with InGaAlp | Toshihide Izumiya, Yasuo Ohba | 1994-05-31 |
| 5273933 | Vapor phase growth method of forming film in process of manufacturing semiconductor device | Toshihide Izumiya, Yasuo Ohba | 1993-12-28 |
| 5235194 | Semiconductor light-emitting device with InGaAlP | Toshihide Izumiya, Yasuo Ohba | 1993-08-10 |
| 5103271 | Semiconductor light emitting device and method of fabricating the same | Toshihide Izumiya, Yasuo Ohba | 1992-04-07 |
| 5079184 | Method of manufacturing III-IV group compound semiconductor device | Toshihide Izumiya, Yasuo Ohba | 1992-01-07 |
| 5076860 | AlGaN compound semiconductor material | Yasuo Ohba, Toshihide Izumiya | 1991-12-31 |
| 5042043 | Semiconductor laser using five-element compound semiconductor | Toshihide Izumiya, Yasuo Ohba | 1991-08-20 |
| 5005057 | Semiconductor light-emitting diode and method of manufacturing the same | Toshihide Izumiya, Yasuo Ohba | 1991-04-02 |