HO

Hiromichi Ohashi

KT Kabushiki Kaisha Toshiba: 33 patents #712 of 21,451Top 4%
ND Nitto Denko: 6 patents #560 of 2,479Top 25%
TO Toshiba: 4 patents #258 of 2,688Top 10%
📍 Ibaraki, JP: #86 of 6,779 inventorsTop 2%
Overall (All Time): #63,302 of 4,157,543Top 2%
46
Patents All Time

Issued Patents All Time

Showing 26–46 of 46 patents

Patent #TitleCo-InventorsDate
5747926 Ferroelectric cold cathode Masayuki Nakamoto 1998-05-05
5714775 Power semiconductor device Tomoki Inoue, Ichiro Omura 1998-02-03
5286984 Conductivity modulated MOSFET Akio Nakagawa, Yoshihiro Yamaguchi, Kiminori Watanabe, Thuneo Thukakoshi 1994-02-15
5212396 Conductivity modulated field effect transistor with optimized anode emitter and anode base impurity concentrations Akio Nakagawa 1993-05-18
5093701 Conductivity modulated MOSFET Akio Nakagawa, Yoshihiro Yamaguchi, Kiminori Watanabe, Thuneo Thukakoshi 1992-03-03
5086323 Conductivity modulated MOSFET Akio Nakagawa, Yoshihiro Yamaguchi, Kiminori Watanabe, Thuneo Thukakoshi 1992-02-04
5028974 Semiconductor switching device with anode shortening structure Mituhiko Kitagawa, Tsuneo Ogura, Yoshinari Uetake, Yoshio Yokota, Kazuo Watanuki 1991-07-02
5006921 Power semiconductor switching apparatus with heat sinks Masaru Ishizuka, Yasuyuki Yokono, Asako Matsuura, Yoshio Kamei, Mitsuhiko Kitagawa +2 more 1991-04-09
4928155 Lateral conductivity modulated MOSFET Akio Nakagawa, Yoshihiro Yamaguchi, Kiminori Watanabe, Thuneo Thukakoshi 1990-05-22
4881120 Conductive modulated MOSFET Akio Nakagawa, Yoshihiro Yamaguchi, Kiminori Watanabe, Thuneo Thukakoshi 1989-11-14
4791470 Reverse conducting gate turn-off thyristor device Takashi Shinohe, Katsuhiko Takigami, Tsuneo Ogura, Masayuki Asaka 1988-12-13
4782372 Lateral conductivity modulated MOSFET Akio Nakagawa, Yoshihiro Yamaguchi, Kiminori Watanabe, Thuneo Thukakoshi 1988-11-01
4738935 Method of manufacturing compound semiconductor apparatus Masaru Shimbo, Kazuyoshi Furukawa, Kiyoshi Fukuda 1988-04-19
4717940 MIS controlled gate turn-off thyristor Takashi Shinohe, Katsuhiko Takigami, Akio Nakagawa 1988-01-05
4700466 Method of manufacturing semiconductor device wherein silicon substrates are bonded together Akio Nakagawa, Tsuneo Ogura, Masaru Shimbo 1987-10-20
4689647 Conductivity modulated field effect switch with optimized anode emitter and anode base impurity concentrations Akio Nakagawa 1987-08-25
4672407 Conductivity modulated MOSFET Akio Nakagawa, Yoshihiro Yamaguchi, Kiminori Watanabe, Thuneo Thukakoshi 1987-06-09
4649410 Radiation controllable thyristor with multiple non-concentric amplified stages 1987-03-10
4595939 Radiation-controllable thyristor with multiple, non-concentric amplified stages Yoshihiro Yamaguchi 1986-06-17
4546369 Light-activated amplified gate bi-directional thyristor Tsuneo Tsukakoshi 1985-10-08
4368481 Light-driven semiconductor device Yoshihiro Shirasaka 1983-01-11