EU

Eiichirou Uda

KT Kabushiki Kaisha Toshiba: 3 patents #8,011 of 21,451Top 40%
📍 Platte City, MO: #41 of 107 inventorsTop 40%
🗺 Missouri: #6,609 of 23,789 inventorsTop 30%
Overall (All Time): #1,618,133 of 4,157,543Top 40%
3
Patents All Time

Issued Patents All Time

Showing 1–3 of 3 patents

Patent #TitleCo-InventorsDate
6447355 Impregnated-type cathode substrate with large particle diameter low porosity region and small particle diameter high porosity region Toshiharu Higuchi, Osamu Nakamura, Kiyomi Koyama, Sadao Matsumoto, Yoshiaki Ouchi +3 more 2002-09-10
6304024 Impregnated-type cathode substrate with large particle diameter low porosity region and small particle diameter high porosity region Toshiharu Higuchi, Osamu Nakamura, Kiyomi Koyama, Sadao Matsumoto, Yoshiaki Ouchi +3 more 2001-10-16
6034469 Impregnated type cathode assembly, cathode substrate for use in the assembly, electron gun using the assembly, and electron tube using the cathode assembly Toshiharu Higuchi, Osamu Nakamura, Kiyomi Koyama, Sadao Matsumoto, Yoshiaki Ouchi +3 more 2000-03-07