Issued Patents All Time
Showing 1–13 of 13 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11937429 | Integrated structures including material containing silicon, nitrogen, and at least one of carbon, oxygen, boron and phosphorus | Justin B. Dorhout, Fei Wang, Chet E. Carter, Ian C. Laboriante, John D. Hopkins +5 more | 2024-03-19 |
| 11792991 | Memory arrays and methods used in forming a memory array comprising strings of memory cells | Paolo Tessariol, Justin B. Dorhout, Jian Li | 2023-10-17 |
| 11563011 | Integrated circuitry, memory circuitry, method used in forming integrated circuitry, and method used in forming memory circuitry | Vinay Nair, Silvia Borsari, Russell A. Benson, Yi Fang Lee | 2023-01-24 |
| 11244955 | Memory arrays and methods used in forming a memory array comprising strings of memory cells | Paolo Tessariol, Justin B. Dorhout, Jian Li | 2022-02-08 |
| 11239252 | Integrated structures including material containing silicon, nitrogen, and at least one of carbon, oxygen, boron and phosphorus | Justin B. Dorhout, Fei Wang, Chet E. Carter, Ian C. Laboriante, John D. Hopkins +5 more | 2022-02-01 |
| 11094627 | Methods used in forming a memory array comprising strings of memory cells | Vladimir Machkaoutsan, Pieter Blomme, Emilio Camerlenghi, Justin B. Dorhout, Jian Li +1 more | 2021-08-17 |
| 10727242 | Methods of forming an array of elevationally-extending strings of memory cells comprising a programmable charge storage transistor and arrays of elevationally-extending strings of memory cells comprising a programmable charge storage transistor | Justin B. Dorhout, Kunal R. Parekh, Matthew Park, Joseph Neil Greeley, Chet E. Carter +4 more | 2020-07-28 |
| 10720446 | Integrated structures including material containing silicon, nitrogen, and at least one of carbon, oxygen, boron and phosphorus | Justin B. Dorhout, Fei Wang, Chet E. Carter, Ian C. Laboriante, John D. Hopkins +5 more | 2020-07-21 |
| 10586807 | Arrays of elevationally-extending strings of memory cells having a stack comprising vertically-alternating insulative tiers and wordline tiers and horizontally-elongated trenches in the stacks | Zhiqiang Xie, Chris M. Carlson, Justin B. Dorhout, Anish A. Khandekar, Greg Light +3 more | 2020-03-10 |
| 10388665 | Methods of forming an array of elevationally-extending strings of memory cells having a stack comprising vertically-alternating insulative tiers and wordline tiers and horizontally-elongated trenches in the stack | Zhiqiang Xie, Chris M. Carlson, Justin B. Dorhout, Anish A. Khandekar, Greg Light +3 more | 2019-08-20 |
| 10263007 | Methods of forming an array of elevationally-extending strings of memory cells comprising a programmable charge storage transistor and arrays of elevationally-extending strings of memory cells comprising a programmable charge storage transistor | Justin B. Dorhout, Kunal R. Parekh, Matthew Park, Joseph Neil Greeley, Chet E. Carter +4 more | 2019-04-16 |
| 10157933 | Integrated structures including material containing silicon, nitrogen, and at least one of carbon, oxygen, boron and phosphorus | Justin B. Dorhout, Fei Wang, Chet E. Carter, Ian C. Laboriante, John D. Hopkins +5 more | 2018-12-18 |
| 10014309 | Methods of forming an array of elevationally-extending strings of memory cells comprising a programmable charge storage transistor and arrays of elevationally-extending strings of memory cells comprising a programmable charge storage transistor | Justin B. Dorhout, Kunal R. Parekh, Matthew Park, Joseph Neil Greeley, Chet E. Carter +4 more | 2018-07-03 |