Issued Patents All Time
Showing 1–14 of 14 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8710568 | Semiconductor device having a plurality of elements on one semiconductor substrate and method of manufacturing the same | Tetsuo Fujii, Kenji Kouno | 2014-04-29 |
| 8396164 | Receiving device including impedance control circuit and semiconductor device including impedance control circuit | Youichirou Suzuki, Noboru Maeda, Takashi Nakano, Kazuyoshi Nagase, Koji Kondo +1 more | 2013-03-12 |
| 8290066 | Signal transmission circuit | Hiroyuki Mori, Norio Sanma, Kazuyoshi Nagase | 2012-10-16 |
| 8102025 | Semiconductor device having IGBT and diode | Norihito Tokura, Yukio Tsuzuki | 2012-01-24 |
| 8026572 | Semiconductor device and method for manufacturing same | Kenji Kouno, Tetsuo Fujii | 2011-09-27 |
| 7692221 | Semiconductor device having IGBT element | Yukio Tsuzuki | 2010-04-06 |
| 7667269 | Trench gate type semiconductor device | Yukio Tsuzuki, Norihito Tokura, Kensaku Yamamoto | 2010-02-23 |
| 7498658 | Trench gate type insulated gate bipolar transistor | Kensaku Yamamoto | 2009-03-03 |
| 7456484 | Semiconductor device having IGBT and diode | Norihito Tokura, Yukio Tsuzuki | 2008-11-25 |
| 6765266 | Semiconductor device with peripheral portion for withstanding surge voltage | Yutaka Tomatsu, Norihito Tokura, Haruo Kawakita | 2004-07-20 |
| 6603173 | Vertical type MOSFET | Yoshifumi Okabe, Shigeki Takahashi, Norihito Tokura | 2003-08-05 |
| 6451645 | Method for manufacturing semiconductor device with power semiconductor element and diode | Yoshifumi Okabe, Yutaka Tomatsu | 2002-09-17 |
| 6316300 | Method of manufacturing a semiconductor device having an oxidation process for selectively forming an oxide film | Yoshifumi Okabe, Takeshi Fukazawa, Hisanori Yokura | 2001-11-13 |
| 6281546 | Insulated gate field effect transistor and manufacturing method of the same | Naoto Okabe, Naohito Kato | 2001-08-28 |