Naohito Kato has been granted 16 US patents while listed as an inventor at Nippondenso Co. . The first was granted in 1991 and the most recent in November 2017. Naohito Kato ranks #284,196 of 4,157,543 US inventors in our database (top 6.8%). Patent records list Naohito Kato in Chiryu, MH, JP.
Patents per Year Patents granted per year, 1991 to 2017 Bar chart with a peak of 2 patents in 1995. peak 2 1991: 1 patents 1991 1992: 1 patents 1995: 2 patents 1995 1996: 2 patents 1997: 2 patents 1997 1998: 2 patents 1999: 1 patents 1999 2001: 1 patents 2002: 1 patents 2002 2010: 2 patents 2017: 1 patents 2017 Issued Patents All Time
Showing 1–16 of 16 patents
Patent # Title Co-Inventors Date
9815400 Headlight control device and headlight Takahito Nishii , Koichi Kato , Kazuya Asaoka , Sho Masuda 2017-11-14
7800174 Power semiconductor switching-device and semiconductor power module using the device Motoo Yamaguchi , Yutaka Tomatsu 2010-09-21
7755295 Vehicle head lamp device Yuji Kajita 2010-07-13
6452219 Insulated gate bipolar transistor and method of fabricating the same Yoshiyuki Miyase , Haruo Kawakita , Naoto Okabe 2002-09-17
6281546 Insulated gate field effect transistor and manufacturing method of the same Yoshihiko Ozeki , Naoto Okabe 2001-08-28
5973338 Insulated gate type bipolar-transistor Naoto Okabe , Norihito Tokura 1999-10-26
5723882 Insulated gate field effect transistor having guard ring regions Naoto Okabe 1998-03-03
5719412 Insulated gate bipolar transistor Naoto Okabe 1998-02-17
5621234 Vertical semiconductor device with breakdown voltage improvement region — 1997-04-15
5609145 Internal combustion engine ignition system Masami Kojima 1997-03-11
5519245 Insulated gate bipolar transistor with reverse conducting current Norihito Tokura , Naoto Okabe 1996-05-21
5510634 Insulated gate bipolar transistor Naoto Okabe 1996-04-23
5475258 Power semiconductor device with protective element Etsuji Toyoda , Naoto Okabe 1995-12-12
5464992 Insulated gate bipolar transistor provided with a minority carrier extracting layer Naoto Okabe , Tsuyoshi Yamamoto 1995-11-07
5169793 Method of making an insulated gate bipolar transistor having gate shield region Naoto Okabe , Tsuyoshi Yamamoto 1992-12-08
4994880 Semiconductor device constituting bipolar transistor Yoshiyuki Miyase , Tomoatsu Makino , Kasuhiro Yamada , Masami Yamaoka , Takeshi Matsui +3 more 1991-02-19
