Issued Patents All Time
Showing 25 most recent of 28 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11215404 | Heat transfer tube and cracking furnace using the same | Guoqing Wang, Lijun Zhang, Junjie Liu, Zhiguo Du, Yonggang Zhang +2 more | 2022-01-04 |
| 10209011 | Heat transfer tube and cracking furnace using the same | Guoqing Wang, Lijun Zhang, Junjie Liu, Zhiguo Du, Yonggang Zhang +2 more | 2019-02-19 |
| 9799727 | Isolation trench fill using oxide liner and nitride etch back technique with dual trench depth capability | — | 2017-10-24 |
| 9505677 | Steam cracking processes | Guoqing Wang, Lijun Zhang, Yonggang Zhang, Junjie Liu, Zhiguo Du +2 more | 2016-11-29 |
| 9486555 | Polyhedral oligomeric silsesquioxane (poss)-based bioactive hybrid glass as a scaffold for hard tissue engineering | Nita Sahai | 2016-11-08 |
| 9359560 | Heat transfer tube and cracking furnace using the heat transfer tube | Guoqing Wang, Lijun Zhang, Junjie Liu, Zhiguo Du, Yonggang Zhang +2 more | 2016-06-07 |
| 9349632 | Isolation trench fill using oxide liner and nitride etch back technique with dual trench depth capability | — | 2016-05-24 |
| 9181375 | Fluorescent potassium ion sensors | Yanqing Tian, Deirdre Meldrum, Fengyu Su, Roger Johnson, Cody Youngbull | 2015-11-10 |
| 8952485 | Isolation trench fill using oxide liner and nitride etch back technique with dual trench depth capability | — | 2015-02-10 |
| 8585890 | Tubular cracking furnace | Guoqing Wang, Lijun Zhang, Zhiguo Du, Shuo Chen, Zhaobin Zhang +1 more | 2013-11-19 |
| 8304307 | Method of fabricating different gate oxides for different transistors in an integrated circuit | — | 2012-11-06 |
| 8102006 | Different gate oxides thicknesses for different transistors in an integrated circuit | — | 2012-01-24 |
| 8053321 | Formation of standard voltage threshold and low voltage threshold MOSFET devices | Mark A. Helm | 2011-11-08 |
| 8035189 | Semiconductor constructions | Michael A. Smith, Sukesh Sandhu, Graham R. Wolstenholme | 2011-10-11 |
| 7939394 | Multiple-depth STI trenches in integrated circuit fabrication | Shubneesh Batra, Howard C. Kirsch, Gurtej S. Sandhu, Chih-Chen Cho | 2011-05-10 |
| 7790544 | Method of fabricating different gate oxides for different transistors in an integrated circuit | — | 2010-09-07 |
| 7781860 | Semiconductor constructions, and electronic systems | Michael A. Smith, Sukesh Sandhu, Graham R. Wolstenholme | 2010-08-24 |
| 7755146 | Formation of standard voltage threshold and low voltage threshold MOSFET devices | Mark A. Helm | 2010-07-13 |
| 7696579 | Formation of standard voltage threshold and low voltage threshold MOSFET devices | Mark A. Helm | 2010-04-13 |
| 7691722 | Isolation trench fill using oxide liner and nitride etch back technique with dual trench depth capability | — | 2010-04-06 |
| 7473615 | Semiconductor processing methods | Michael A. Smith, Sukesh Sandhu, Graham R. Wolstenholme | 2009-01-06 |
| 7439140 | Formation of standard voltage threshold and low voltage threshold MOSFET devices | Mark A. Helm | 2008-10-21 |
| 7413946 | Formation of standard voltage threshold and low voltage threshold MOSFET devices | Mark A. Helm | 2008-08-19 |
| 7354812 | Multiple-depth STI trenches in integrated circuit fabrication | Shubneesh Batra, Howard C. Kirsch, Gurtej S. Sandhu, Chih-Chen Cho | 2008-04-08 |
| 7304353 | Formation of standard voltage threshold and low voltage threshold MOSFET devices | Mark A. Helm | 2007-12-04 |