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Retardation films having single retardation value with variation |
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Bistable liquid crystal device |
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Color twisted nematic liquid crystal displays |
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Color vertically aligned liquid crystal displays |
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Method for forming MOSFET device having source/drain extension regions located underlying L shaped spacers |
Ting Cheong Ang, Shyue Fong Quek, Jun Song |
2002-09-24 |
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Process to fabricate a source-drain extension |
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2002-04-23 |
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Process to fabricate a novel source-drain extension |
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2001-11-20 |
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Dual gate and double poly capacitor analog process integration |
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Method of fabrication of a raised source/drain transistor |
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2000-08-08 |
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Method to form CoSi.sub.2 on shallow junction by Si implantation |
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2000-08-01 |
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Method for forming a raised source and drain without using selective epitaxial growth |
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2000-07-18 |