| 5635242 |
Method and apparatus for preventing rupture and contamination of an ultra-clean APCVD reactor during shutdown |
Paul D. Agnello |
1997-06-03 |
| 5487783 |
Method and apparatus for preventing rupture and contamination of an ultra-clean APCVD reactor during shutdown |
Paul D. Agnello |
1996-01-30 |
| 5378651 |
Comprehensive process for low temperature epitaxial growth |
Paul D. Agnello, Detlev Gruetzmacher, Tung-Sheng Kuan |
1995-01-03 |
| 5227330 |
Comprehensive process for low temperature SI epit axial growth |
Paul D. Agnello, Tung-Sheng Kuan |
1993-07-13 |
| 4601779 |
Method of producing a thin silicon-on-insulator layer |
John R. Abernathey, Jerome B. Lasky, Larry A. Nesbit, Scott R. Stiffler |
1986-07-22 |
| 4354198 |
Zinc-sulphide capping layer for gallium-arsenide device |
Rodney T. Hodgson, George D. Pettit, Jerry M. Woodall |
1982-10-12 |
| 4211803 |
CVD Growth of magnetic oxide films having growth induced anisotropy |
Melvyn E. Cowher |
1980-07-08 |
