Issued Patents All Time
Showing 25 most recent of 54 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 5756250 | Electrophotographic method using a cleaning blade to remove residual toner | Yutaka Hirai, Toshiyuki Komatsu, Katsumi Nakagawa, Tadaji Fukuda | 1998-05-26 |
| 5658703 | Electrophotographic photosensitive member and process for production thereof | Yutaka Hirai, Toshiyuki Komatsu, Katsumi Nakagawa, Tadaji Fukuda | 1997-08-19 |
| 5640663 | Electrophotographic method using a cleaning blade to remove residual toner | Yutaka Hirai, Toshiyuki Komatsu, Katsumi Nakagawa, Tadaji Fukuda | 1997-06-17 |
| 5585149 | CVD method for forming a photoconductive hydrogenated a-Si layer | Yutaka Hirai, Toshiyuki Komatsu, Katsumi Nakagawa, Tadaji Fukuda | 1996-12-17 |
| RE35198 | Image forming member for electrophotography | Katsumi Nakagawa, Toshiyuki Komatsu, Yutaka Hirai, Tadaji Fukuda | 1996-04-02 |
| 5443645 | Microwave plasma CVD apparatus comprising coaxially aligned multiple gas pipe gas feed structure | Hirokazu Otoshi, Tetsuya Takei, Yasuyoshi Takai, Ryuji Okamura, Shigeru Shirai | 1995-08-22 |
| 4998968 | Plasma CVD apparatus | — | 1991-03-12 |
| 4972799 | Microwave plasma chemical vapor deposition apparatus for mass-producing functional deposited films | Masaaki Yamamura, Minoru Kato | 1990-11-27 |
| 4795688 | Layered photoconductive member comprising amorphous silicon | Kyosuke Ogawa, Junichiro Kanbe, Keishi Saitoh, Yoichi Osato, Shigeru Shirai | 1989-01-03 |
| 4720443 | Member having light receiving layer with nonparallel interfaces | Keishi Saitoh, Masahiro Kanai, Tetsuo Sueda, Yoshio Tsuezuki, Kyosuke Ogawa | 1988-01-19 |
| 4707210 | Plasma CVD apparatus | — | 1987-11-17 |
| 4705735 | Member having substrate with protruding surface portions and light receiving layer with amorphous silicon matrix | Keishi Saitoh, Tetsuo Sueda, Kyosuke Ogawa, Yoshio Tsuezuki, Masahiro Kanai | 1987-11-10 |
| 4705732 | Member having substrate with projecting portions at surface and light receiving layer of amorphous silicon | Keishi Saitoh, Masahiro Kanai, Tetsuo Sueda, Yoshio Tsuezuki, Kyosuke Ogawa | 1987-11-10 |
| 4705734 | Member having substrate with irregular surface and light receiving layer of amorphous silicon | Keishi Saitoh, Tetsuo Sueda, Kyosuke Ogawa, Yoshio Tsuezuki, Masahiro Kanai | 1987-11-10 |
| 4705731 | Member having substrate with protruding surface light receiving layer of amorphous silicon and surface reflective layer | Keishi Saitoh, Tetsuo Sueda, Kyosuke Ogawa, Yoshio Tsuezuki, Masahiro Kanai | 1987-11-10 |
| 4705733 | Member having light receiving layer and substrate with overlapping subprojections | Keishi Saitoh, Masahiro Kanai, Tetsuo Sueda, Yoshio Tsuezuki, Kyosuke Ogawa | 1987-11-10 |
| 4705730 | Light-receiving member | Keishi Saitoh, Tetsuo Sueda, Kyosuke Ogawa, Yoshio Tsuezuki, Masahiro Kanai | 1987-11-10 |
| 4701393 | Member with light receiving layer of A-SI(GE) and A-SI and having plurality of non-parallel interfaces | Keishi Saitoh, Masahiro Kanai, Tetsuo Sueda, Yoshio Tsuezuki, Kyosuke Ogawa | 1987-10-20 |
| 4701392 | Member having light receiving layer with nonparallel interfaces and antireflection layer | Keishi Saitoh, Masahiro Kanai, Tetsuo Sueda, Yoshio Tsuezuki, Kyosuke Ogawa | 1987-10-20 |
| 4696884 | Member having photosensitive layer with series of smoothly continuous non-parallel interfaces | Keishi Saitoh, Masahiro Kanai, Tetsuo Sueda, Yoshio Tsuezuki, Kyosuke Ogawa | 1987-09-29 |
| 4696883 | Member having light receiving layer with smoothly connected non-parallel interfaces and surface reflective layer | Keishi Saitoh, Tetsuo Sueda, Kyosuke Ogawa, Yoshio Tsuezuki, Masahiro Kanai | 1987-09-29 |
| 4696882 | Member having light receiving layer with smoothly interconnecting nonparallel interfaces | Keishi Saitoh, Tetsuo Sueda, Kyosuke Ogawa, Yoshio Tsuezuki, Masahiro Kanai | 1987-09-29 |
| 4696881 | Member having light receiving layer with smoothly connected interfaces | Keishi Saitoh, Tetsuo Sueda, Kyosuke Ogawa, Yoshio Tsuezuki, Masahiro Kanai | 1987-09-29 |
| 4678733 | Member having light receiving layer of A-Si: Ge (C,N,O) A-Si/surface antireflection layer with non-parallel interfaces | Keishi Saitoh, Masahiro Kanai, Tetsuo Sueda, Yoshio Tsuezuki, Kyosuke Ogawa | 1987-07-07 |
| 4675263 | Member having substrate and light-receiving layer of A-Si:Ge film and A-Si film with non-parallel interface with substrate | Keishi Saitoh, Masahiro Kanai, Tetsuo Sueda, Yoshio Tsuezuki, Kyosuke Ogawa | 1987-06-23 |