Issued Patents All Time
Showing 1–23 of 23 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6090969 | Process for the preparation of an asymmetric compound using a metal complex | Masakatsu Shibasaki, Hiroaki Sasai | 2000-07-18 |
| 5847186 | Process for preparing asymmetric compound by using metal complex | Masakatsu Shibasaki, Hiroaki Sasai | 1998-12-08 |
| 5061511 | Method for forming functional deposited films by means of microwave plasma chemical vapor deposition method | Keishi Saitoh, Junichiro Hashizume, Shigehira Iida, Tetsuya Takei | 1991-10-29 |
| 5038713 | Microwave plasma treating apparatus | Soichiro Kawakami, Masahiro Kanai, Tsutomu Murakami | 1991-08-13 |
| 5019887 | Non-single crystalline photosensor with hydrogen and halogen | Mitsuyuki Niwa, Isamu Shimizu, Eiji Takeuchi, Tsutomu Murakami, Shunichi Ishihara | 1991-05-28 |
| 5002793 | Process for forming film in a three-chambered apparatus having two chamber faces coated with films of at least 10.sup.6 .OMEGA. cm resistance | — | 1991-03-26 |
| 4971832 | HR-CVD process for the formation of a functional deposited film on a substrate with application of a voltage in the range of -5 to -100 V | Masahiro Kanai | 1990-11-20 |
| 4957772 | Method for forming functional deposited films by means of microwave plasma chemical vapor deposition method | Keishi Saitoh, Junichiro Hashizume, Shigehira Iida, Tetsuya Takei | 1990-09-18 |
| 4953498 | Microwave plasma CVD apparatus having substrate shielding member | Junichiro Hashizume, Tetsuya Takei, Shigehira Iida, Keishi Saitoh | 1990-09-04 |
| 4940642 | Electrophotographic light receiving member having polycrystalline silicon charge injection inhibition layer prepared by chemical reaction of excited precursors and A-SI:C:H surface layer | Shigeru Shirai, Keishi Saito, Minoru Kato, Yasushi Fujioka | 1990-07-10 |
| 4930442 | Microwave plasma CVD apparatus having an improved microwave transmissive window | Shigehira Iida, Junichiro Hashizume, Tetsuya Takei, Keishi Saitoh | 1990-06-05 |
| 4908330 | Process for the formation of a functional deposited film containing group IV atoms or silicon atoms and group IV atoms by microwave plasma chemical vapor deposition process | Masahiro Kanai, Soichiro Kawakami, Tsutomu Murakami | 1990-03-13 |
| 4908329 | Process for the formation of a functional deposited film containing groups II and VI atoms by microwave plasma chemical vapor deposition process | Masahiro Kanai, Tsutomu Murakami, Soichiro Kawakami | 1990-03-13 |
| 4897284 | Process for forming a deposited film on each of a plurality of substrates by way of microwave plasma chemical vapor deposition method | Shigehira Iida, Junichiro Hashizume, Tetsuya Takei, Keishi Saitoh | 1990-01-30 |
| 4897281 | Process for the formation of a functional deposited film by way of microwave plasma CVD method | Shigehira Iida, Keishi Saitoh, Junichiro Hashizume, Tetsuya Takei | 1990-01-30 |
| 4824749 | Light receiving member for use in electrophotography and process for the production thereof | Shigeru Shirai, Keishi Saito, Minoru Kato, Yasushi Fujioka | 1989-04-25 |
| 4818655 | Electrophotographic light receiving member with surface layer of a-(Si.sub.x C.sub.1-x).sub.y :H.sub.1-y wherein x is 0.1-0.99999 and y is 0.3-0.59 | Shigeru Shirai, Keishi Saito, Minoru Kato, Yasushi Fujioka | 1989-04-04 |
| 4804604 | Light receiving member for use in electrophotography | Shigeru Shirai, Keishi Saito, Minoru Kato, Yasushi Fujioka | 1989-02-14 |
| 4792509 | Light receiving member for use in electrophotography | Shigeru Shirai, Keishi Saitoh, Minoru Kato, Yasushi Fujioka | 1988-12-20 |
| 4788120 | Light receiving member for use in electrophotography having an amorphous silicon layer | Shigeru Shirai, Keishi Saito, Minoru Kato, Yasushi Fujioka | 1988-11-29 |
| 4786574 | Layered amorphous silicon containing photoconductive element having surface layer with specified optical band gap | Shigeru Shirai, Keishi Saitoh, Minoru Kato, Yasushi Fujioka | 1988-11-22 |
| 4780387 | Light receiving member for use in electrophotography comprising amorphous silicon layer and polycrystalline layer | Shigeru Shirai, Keishi Saitoh, Minoru Kato, Yasushi Fujioka | 1988-10-25 |
| 4738913 | Light receiving member for use in electrophotography comprising surface layer of a-Si:C:H | Shigeru Shirai, Keishi Saito, Minoru Kato, Yasushi Fujioka | 1988-04-19 |