Issued Patents All Time
Showing 25 most recent of 31 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12262562 | Image sensor with varying depth deep trench isolation structure for reduced crosstalk | — | 2025-03-25 |
| 12107107 | Dark-current inhibiting image sensor and method | Yifei Du, Zhiqiang Lin, Hui Zang | 2024-10-01 |
| 12087792 | Suppressed cross-talk pixel-array substrate and fabrication method | Bill Phan, Duli Mao | 2024-09-10 |
| 11984464 | CMOS image sensor having front side and back side trench isolation structures enclosing pixel regions and a capacitor for storing the image charge | Yuanliang Liu | 2024-05-14 |
| 11901383 | Transistor having increased effective channel width | Young Woo Jung | 2024-02-13 |
| 11876110 | SiGe photodiode for crosstalk reduction | Heesoo Kang, Bill Phan | 2024-01-16 |
| 11869906 | Image sensor with elevated floating diffusion | Heesoo Kang | 2024-01-09 |
| 11862509 | Shallow trench isolation (STI) structure for CMOS image sensor | Heesoo Kang, Xiang Zhang | 2024-01-02 |
| 11810928 | CMOS image sensor with LED flickering reduction and low color cross-talk | Duli Mao, Bill Phan, Yuanliang Liu, Alireza Bonakdar, Chengming Liu +1 more | 2023-11-07 |
| 11705475 | Method of forming shallow trench isolation (STI) structure for suppressing dark current | — | 2023-07-18 |
| 11700464 | Selective nitrided gate-oxide for RTS noise and white-pixel reduction | — | 2023-07-11 |
| 11695030 | Reduced cross-talk pixel-array substrate and fabrication method | — | 2023-07-04 |
| 11647300 | Method for forming LED flickering reduction (LFR) film for HDR image sensor and image sensor having same | — | 2023-05-09 |
| 11626433 | Transistors having increased effective channel width | Sing-Chung Hu, Bill Phan | 2023-04-11 |
| 11616088 | Transistors having increased effective channel width | Sing-Chung Hu, Bill Phan | 2023-03-28 |
| 11557620 | Metal grid structure integrated with deep trench isolation structure | Yibo Zhu, Keiji Mabuchi | 2023-01-17 |
| 11527569 | High dynamic range split pixel CMOS image sensor with low color crosstalk | Duli Mao, Bill Phan, Keiji Mabuchi, Yuanliang Liu, Vincent Venezia | 2022-12-13 |
| 11444108 | Isolation structure for suppression floating diffusion junction leakage in CMOS image sensor | Bill Phan | 2022-09-13 |
| 11348957 | Transistor having increased effective channel width | Young Woo Jung | 2022-05-31 |
| 11289530 | Shallow trench isolation (STI) structure for CMOS image sensor | — | 2022-03-29 |
| 11282890 | Shallow trench isolation (STI) structure for suppressing dark current and method of forming | — | 2022-03-22 |
| 11264419 | Image sensor with fully depleted silicon on insulator substrate | — | 2022-03-01 |
| 11217613 | Image sensor with split pixel structure and method of manufacturing thereof | Bill Phan, Yuanliang Liu, Duli Mao, Alireza Bonakdar | 2022-01-04 |
| 11189655 | Isolation structure for suppressing floating diffusion junction leakage in CMOS image sensor | — | 2021-11-30 |
| 10879171 | Vertically oriented metal silicide containing e-fuse device | Chun Yu Wong, Kwan-Yong Lim, Jagar Singh, Hui Zang | 2020-12-29 |