| 8815702 |
Methods of manufacturing semiconductor devices having a support structure for an active layer pattern |
Chang-Woo Oh, Dong-Gun Park, Dong Won Kim, Sung Hwan Kim |
2014-08-26 |
| 8680588 |
Field effect transistor with buried gate pattern |
Dong-Uk Choi, Chang-Woo Oh, Dong Won Kim, Min Sang Kim, Sung Hwan Kim +1 more |
2014-03-25 |
| 8528376 |
Mold set for manufacturing case and the method thereof |
Sheng-Chi Tsai, Ping-Kuo Cheng, Tai-Chang CHEN |
2013-09-10 |
| 8426901 |
Semiconductor devices having a support structure for an active layer pattern |
Chang-Woo Oh, Dong-Gun Park, Dong Won Kim, Sung Hwan Kim |
2013-04-23 |
| 8124961 |
Single electron transistor |
Sung-Dae Suk, Kyoung-Hwan Yeo, Yun-Young Yeoh |
2012-02-28 |
| 8008141 |
Method of fabricating a semiconductor device with multiple channels |
Kyoung-Hwan Yeo, Sung Min Kim, Sung-Dae Suk, Dong Won Kim |
2011-08-30 |
| 7989854 |
Semiconductor devices having a support structure for an active layer pattern |
Chang-Woo Oh, Dong-Gun Park, Dong Won Kim, Sung Hwan Kim |
2011-08-02 |
| 7955932 |
Single electron transistor and method of manufacturing the same |
Sung-Dae Suk, Kyoung-Hwan Yeo, Yun-Young Yeoh |
2011-06-07 |
| 7858457 |
Methods of forming integrated circuit devices including a depletion barrier layer at source/drain regions |
— |
2010-12-28 |
| 7579657 |
Semiconductor device with multiple channels |
Kyoung-Hwan Yeo, Sung Min Kim, Sung-Dae Suk, Dong Won Kim |
2009-08-25 |
| 7514360 |
Thermal robust semiconductor device using HfN as metal gate electrode and the manufacturing process thereof |
Hong Yu Yu, Dim-Lee Kwong, Lakshmi Kanta Bera |
2009-04-07 |
| 7504328 |
Schottky barrier source/drain n-mosfet using ytterbium silicide |
Shiyang Zhu, Jingde Chen, Sungjoo Lee, Jagar Singh, Chunxiang Zhu +1 more |
2009-03-17 |
| 7427788 |
Multi bridge channel field effect transistors with nano-wire channels and methods of manufacturing the same |
Sung Min Kim |
2008-09-23 |
| 7396730 |
Integrated circuit devices including an L-shaped depletion barrier layer adjacent opposite sides of a gate pattern and methods of forming the same |
— |
2008-07-08 |
| 7389664 |
Electromagnetic forming device for sheet of material |
Tung-Chen Cheng, Tzyy-Ker Sue, Chi-Keung Chung, Chun-Chieh Wang, Hsing-Ta Hsieh |
2008-06-24 |
| 7374986 |
Method of fabricating field effect transistor (FET) having wire channels |
Sungmin Kim, Eungjung Yoon |
2008-05-20 |
| 7361545 |
Field effect transistor with buried gate pattern |
Dong-Uk Choi, Chang-Woo Oh, Dong Won Kim, Min Sang Kim, Sung Hwan Kim +1 more |
2008-04-22 |
| 7332386 |
Methods of fabricating fin field transistors |
Chul Lee, Min Sang Kim, Dong-Gun Park, Choong-Ho Lee, Chang-Woo Oh +4 more |
2008-02-19 |
| 7274051 |
Field effect transistor (FET) having wire channels and method of fabricating the same |
Sungmin Kim, Eungjung Yoon |
2007-09-25 |
| 7002175 |
Method of making resonant tunneling diodes and CMOS backend-process-compatible three dimensional (3-D) integration |
Jagar Singh, Yong-Tian Hou |
2006-02-21 |
