Issued Patents All Time
Showing 1–25 of 72 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12364168 | Magnetoresistance effect element | Shinto ICHIKAWA, Tomoyuki Sasaki | 2025-07-15 |
| 12288576 | Magnetoresistance effect element, magnetic recording element, and high-frequency device | Shinto ICHIKAWA, Kazuumi INUBUSHI | 2025-04-29 |
| 12278033 | Magnetoresistance effect element | Shinto ICHIKAWA, Kazuumi INUBUSHI | 2025-04-15 |
| 12274184 | Magnetoresistance effect element | Shinto ICHIKAWA, Tsuyoshi Suzuki, Tomoyuki Sasaki | 2025-04-08 |
| 12217775 | Magnetoresistance effect element and Heusler alloy | Kazuumi INUBUSHI, Tetsuya Uemura | 2025-02-04 |
| 12063873 | Tunnel barrier layer, magnetoresistance effect element, and method for manufacturing tunnel barrier layer | Shinto ICHIKAWA | 2024-08-13 |
| 12035635 | Magnetoresistance effect element | Shinto ICHIKAWA, Kazuumi INUBUSHI | 2024-07-09 |
| 11967348 | Magnetoresistance effect element containing Heusler alloy with additive element | Kazuumi INUBUSHI, Shinto ICHIKAWA | 2024-04-23 |
| 11944018 | Magnetoresistance effect element | Kazuumi INUBUSHI, Shinto ICHIKAWA | 2024-03-26 |
| 11871681 | Magnetoresistance effect element | Tomoyuki Sasaki, Tatsuo Shibata | 2024-01-09 |
| 11840757 | Film deposition system, factory system, and method of depositing film on wafer | Tsuyoshi Suzuki, Tomoyuki Sasaki | 2023-12-12 |
| 11769523 | Magnetoresistance effect element and Heusler alloy | Kazuumi INUBUSHI, Tetsuya Uemura | 2023-09-26 |
| 11730063 | Magnetoresistive effect element including a Heusler alloy layer with a crystal region and an amorphous region | Kazuumi INUBUSHI, Shinto ICHIKAWA | 2023-08-15 |
| 11728082 | Magnetoresistive effect element | Tsuyoshi Suzuki, Shinto ICHIKAWA | 2023-08-15 |
| 11694714 | Magnetoresistance effect element and Heusler alloy | Kazuumi INUBUSHI | 2023-07-04 |
| 11696513 | Magnetoresistance effect element and method for manufacturing the same | Shinto ICHIKAWA | 2023-07-04 |
| 11621392 | Magnetoresistance effect element including a crystallized co heusler alloy layer | Shinto ICHIKAWA, Kazuumi INUBUSHI | 2023-04-04 |
| 11600771 | Magnetoresistance effect element | Tomoyuki Sasaki, Tatsuo Shibata | 2023-03-07 |
| 11594674 | Tunnel barrier layer, magnetoresistance effect element, method for manufacturing tunnel barrier layer, and insulating layer | Shinto ICHIKAWA | 2023-02-28 |
| 11585873 | Magnetoresistive effect element containing two non-magnetic layers with different crystal structures | Shinto ICHIKAWA, Hiroaki Sukegawa, Seiji Mitani, Tadakatsu Ohkubo, Kazuhiro Hono | 2023-02-21 |
| 11581365 | Magnetoresistance effect element and Heusler alloy | Kazuumi INUBUSHI | 2023-02-14 |
| 11525873 | Magnetoresistance effect element including at least one Heusler alloy layer and at least one discontinuous non-magnetic layer | Shinto ICHIKAWA, Kazuumi INUBUSHI | 2022-12-13 |
| 11450342 | Magnetoresistance effect element including a Heusler alloy ferromagnetic layer in contact with an intermediate layer | Kazuumi INUBUSHI | 2022-09-20 |
| 11422211 | Stacked structure, magnetoresistive effect element, magnetic head, sensor, high frequency filter, and oscillator | Kazuumi INUBUSHI | 2022-08-23 |
| 11410689 | Magnetoresistance effect element and Heusler alloy | Kazuumi INUBUSHI, Tetsuya Uemura | 2022-08-09 |