TO

Tadakatsu Ohkubo

NS National Institute For Materials Science: 12 patents #15 of 901Top 2%
Tdk: 2 patents #1,902 of 3,796Top 55%
DL Denka Company Limited: 1 patents #223 of 434Top 55%
TU Tohoku University: 1 patents #615 of 1,680Top 40%
Samsung: 1 patents #49,284 of 75,807Top 70%
KT Kabushiki Kaisha Toshiba: 1 patents #13,537 of 21,451Top 65%
📍 Ibaraki, JP: #845 of 6,779 inventorsTop 15%
Overall (All Time): #396,722 of 4,157,543Top 10%
12
Patents All Time

Issued Patents All Time

Showing 1–12 of 12 patents

Patent #TitleCo-InventorsDate
12293893 Electron source, manufacturing method therefor, and device comprising electron source Hiromitsu Chatani, Daisuke Ishikawa, Jie Tang, Shuai Tang, Jun Uzuhashi +1 more 2025-05-06
11915920 Emitter, electron gun in which same is used, electronic device in which same is used, and method for manufacturing same Jie Tang, Shuai Tang, Ta-Wei Chiu, Jun Uzuhashi, Kazuhiro Hono +1 more 2024-02-27
11585873 Magnetoresistive effect element containing two non-magnetic layers with different crystal structures Shinto ICHIKAWA, Katsuyuki Nakada, Hiroaki Sukegawa, Seiji Mitani, Kazuhiro Hono 2023-02-21
11133459 Magnetic element, magnetic memory device, and magnetic sensor Takayuki Nozaki, Shinji Yuasa, Rachwal Anna Koziol, Masahito Tsujikawa, Masafumi Shirai +2 more 2021-09-28
11105867 Magnetic tunnel junction, magnetoresistive element and spintronics device in which said magnetic tunnel junction is used, and method of manufacturing magnetic tunnel junction Hiroaki Sukegawa, Thomas Scheike, Seiji Mitani, Kazuhiro Hono, Kouichiro Inomata 2021-08-31
11004465 Magneto-resistance element in which I-III-VI2 compound semiconductor is used, method for manufacturing said magneto-resistance element, and magnetic storage device and spin transistor in which said magneto-resistance element is used Shinya Kasai, Yukiko Takahashi, Pohan Cheng, Ikhtiar, Seiji Mitani +1 more 2021-05-11
10832719 Underlayer for perpendicularly magnetized film, perpendicularly magnetized film structure, perpendicular MTJ element, and perpendicular magnetic recording medium using the same Hiroaki Sukegawa, Zhenchao Wen, Seiji Mitani, Koichiro Inomata, Takao Furubayashi +3 more 2020-11-10
10665776 Magnetoresistance effect element and method for manufacturing the same Shinto ICHIKAWA, Katsuyuki Nakada, Seiji Mitani, Hiroaki Sukegawa, Kazuhiro Hono 2020-05-26
10305027 Magnetoresistive element and magnetic memory device Yushi Kato, Tadaomi Daibou, Yuuzo Kamiguchi, Naoharu Shimomura, Junichi Ito +5 more 2019-05-28
10199063 Underlayer for perpendicularly magnetized film, perpendicularly magnetized film structure, perpendicular MTJ element, and perpendicular magnetic recording medium using the same Hiroaki Sukegawa, Zhenchao Wen, Seiji Mitani, Koichiro Inomata, Takao Furubayashi +3 more 2019-02-05
9842636 Perpendicular magnetization film, perpendicular magnetization film structure, magnetoresistance element, and perpendicular magnetic recording medium Hiroaki Sukegawa, Hwachol Lee, Kazuhiro Hono, Seiji Mitani, Jun Liu +2 more 2017-12-12
8872291 Ferromagnetic tunnel junction structure and magnetoresistive effect device and spintronics device utilizing same Hiroaki Sukegawa, Seiji Mitani, Tomohiko NIIZEKI, Kouichiro Inomata, Kazuhiro Hono +4 more 2014-10-28