HS

Hiroaki Sukegawa

NS National Institute For Materials Science: 15 patents #9 of 901Top 1%
Tdk: 2 patents #1,902 of 3,796Top 55%
Samsung: 2 patents #37,631 of 75,807Top 50%
KT Kabushiki Kaisha Toshiba: 1 patents #13,537 of 21,451Top 65%
📍 Tsukuba, JP: #226 of 2,818 inventorsTop 9%
Overall (All Time): #314,413 of 4,157,543Top 8%
15
Patents All Time

Issued Patents All Time

Showing 1–15 of 15 patents

Patent #TitleCo-InventorsDate
11585873 Magnetoresistive effect element containing two non-magnetic layers with different crystal structures Shinto ICHIKAWA, Katsuyuki Nakada, Seiji Mitani, Tadakatsu Ohkubo, Kazuhiro Hono 2023-02-21
11374168 Precursor structure of perpendicularly magnetized film, perpendicularly magnetized film structure and method for manufacturing the same, perpendicular magnetization-type magnetic tunnel junction film in which said structure is used and method for manufacturing the same, and perpendicular magnetization-type magnetic tunnel junction element in which said structure or magnetic tunnel junction film is used Thomas Scheike, Seiji Mitani 2022-06-28
11107976 Magnetic tunnel junction, spintronics device using same, and method for manufacturing magnetic tunnel junction Ikhtiar, Shinya Kasai, Kazuhiro Hono, Xiandong XU 2021-08-31
11105867 Magnetic tunnel junction, magnetoresistive element and spintronics device in which said magnetic tunnel junction is used, and method of manufacturing magnetic tunnel junction Thomas Scheike, Seiji Mitani, Tadakatsu Ohkubo, Kazuhiro Hono, Kouichiro Inomata 2021-08-31
10832719 Underlayer for perpendicularly magnetized film, perpendicularly magnetized film structure, perpendicular MTJ element, and perpendicular magnetic recording medium using the same Zhenchao Wen, Seiji Mitani, Koichiro Inomata, Takao Furubayashi, Jason Paul Hadorn +3 more 2020-11-10
10749105 Monocrystalline magneto resistance element, method for producing the same and method for using same Jiamin Chen, Yuya SAKURABA, Jun Liu, Kazuhiro Hono 2020-08-18
10665776 Magnetoresistance effect element and method for manufacturing the same Shinto ICHIKAWA, Katsuyuki Nakada, Seiji Mitani, Kazuhiro Hono, Tadakatsu Ohkubo 2020-05-26
10395809 Perpendicular magnetic layer and magnetic device including the same Shigeki Takahashi, Yoshiaki Sonobe, Hwachol Lee, Kazuhiro Hono, Seiji Mitani +1 more 2019-08-27
10305027 Magnetoresistive element and magnetic memory device Yushi Kato, Tadaomi Daibou, Yuuzo Kamiguchi, Naoharu Shimomura, Junichi Ito +5 more 2019-05-28
10205091 Monocrystalline magneto resistance element, method for producing the same and method for using same Jiamin Chen, Yuya SAKURABA, Jun Liu, Kazuhiro Hono 2019-02-12
10199063 Underlayer for perpendicularly magnetized film, perpendicularly magnetized film structure, perpendicular MTJ element, and perpendicular magnetic recording medium using the same Zhenchao Wen, Seiji Mitani, Koichiro Inomata, Takao Furubayashi, Jason Paul Hadorn +3 more 2019-02-05
9842636 Perpendicular magnetization film, perpendicular magnetization film structure, magnetoresistance element, and perpendicular magnetic recording medium Hwachol Lee, Kazuhiro Hono, Seiji Mitani, Tadakatsu Ohkubo, Jun Liu +2 more 2017-12-12
8872291 Ferromagnetic tunnel junction structure and magnetoresistive effect device and spintronics device utilizing same Seiji Mitani, Tomohiko NIIZEKI, Tadakatsu Ohkubo, Kouichiro Inomata, Kazuhiro Hono +4 more 2014-10-28
8866243 Ferromagnetic tunnel junction structure and magnetoresistive element using the same Koichiro Inomata, Wenhong Wang 2014-10-21
8575674 Ferromagnetic tunnel junction structure, and magneto-resistive element and spintronics device each using same Koichiro Inomata, Rong Shan, Masaya Kodzuka, Kazuhiro Hono, Takao Furubayashi +1 more 2013-11-05