GS

George L. Schnable

RC Rca: 16 patents #37 of 1,739Top 3%
GE: 3 patents #10,354 of 36,430Top 30%
Harris: 1 patents #1,135 of 2,288Top 50%
UF US Air Force: 1 patents #22 of 214Top 15%
Overall (All Time): #212,325 of 4,157,543Top 6%
21
Patents All Time

Issued Patents All Time

Patent #TitleCo-InventorsDate
5053345 Method of edge doping SOI islands Albert W. Fisher 1991-10-01
H546 Formation of thin-film resistors on silicon substrates Chung P. Wu 1988-11-01
4766482 Semiconductor device and method of making the same Ronald K. Smeltzer, Alvin M. Goodman 1988-08-23
4751554 Silicon-on-sapphire integrated circuit and method of making the same Kenneth M. Schlesier 1988-06-14
4732867 Method of forming alignment marks in sapphire 1988-03-22
4733039 Method of laser soldering Peter John Zanzucchi 1988-03-22
4668973 Semiconductor device passivated with phosphosilicate glass over silicon nitride Robert H. Dawson 1987-05-26
RE32351 Method of manufacturing a passivating composite comprising a silicon nitride (SI.sub.1 3N.sub.4) layer and a phosphosilicate glass (PSG) layer for a semiconductor device layer Robert H. Dawson 1987-02-17
4584026 Ion-implantation of phosphorus, arsenic or boron by pre-amorphizing with fluorine ions Chung P. Wu 1986-04-22
4582745 Dielectric layers in multilayer refractory metallization structure 1986-04-15
4502206 Method of forming semiconductor contacts by implanting ions of neutral species at the interfacial region Chung P. Wu 1985-03-05
4472210 Method of making a semiconductor device to improve conductivity of amorphous silicon films Chung P. Wu, Roger E. Stricker, Bansang W. Lee 1984-09-18
4433008 Doped-oxide diffusion of phosphorus using borophosphosilicate glass Edward James 1984-02-21
4395304 Selective etching of phosphosilicate glass Werner Kern 1983-07-26
4363830 Method of forming tapered contact holes for integrated circuit devices Sheng Teng Hsu 1982-12-14
4278508 Method of detecting a cathodic corrosion site on a metallized substrate Lawrence K. White, Robert B. Comizzoli 1981-07-14
4273805 Passivating composite for a semiconductor device comprising a silicon nitride (Si.sub.1 3N.sub.4) layer and phosphosilicate glass (PSG) layer Robert H. Dawson 1981-06-16
4269654 Silicon nitride and silicon oxide etchant Cheryl A. Deckert 1981-05-26
4249960 Laser rounding a sharp semiconductor projection Chung P. Wu 1981-02-10
4237379 Method for inspecting electrical devices Cheryl A. Deckert, Robert B. Comizzoli 1980-12-02
4196232 Method of chemically vapor-depositing a low-stress glass layer Albert W. Fisher 1980-04-01