Issued Patents All Time
Showing 1–20 of 20 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| RE49285 | Semiconductor device structure and methods of its production | Jr-Tai Chen | 2022-11-08 |
| 10403746 | Heterostructure and method of its production | Jr-Tai Chen | 2019-09-03 |
| 10269565 | Semiconductor device structure and methods of its production | Jr-Tai Chen | 2019-04-23 |
| 10017877 | Silicon carbide crystal growth in a CVD reactor using chlorinated chemistry | Olof Kordina | 2018-07-10 |
| 7361222 | Device and method for producing single crystals by vapor deposition | Peter Raback, Alexandre Ellison | 2008-04-22 |
| 7018597 | High resistivity silicon carbide single crystal | Alexandre Ellison, Nguyen Tien Son, Björn Magnusson | 2006-03-28 |
| 6096627 | Method for introduction of an impurity dopant in SiC, a semiconductor device formed by the method and a use of a highly doped amorphous layer as a source for dopant diffusion into SiC | Christopher Harris, Andrei Konstantinov | 2000-08-01 |
| 6048398 | Device for epitaxially growing objects | Asko Vehanen, Rositza Todorova Yakimova, Marko Tuominen, Olle Kordina, Christer Hallin | 2000-04-11 |
| 6039812 | Device for epitaxially growing objects and method for such a growth | Alex Ellison, Olle Kordina, Chun-Yuan Gu, Christer Hallin, Marko Tuominen | 2000-03-21 |
| 6030661 | Device and a method for epitaxially growing objects by CVD | Olle Kordina, Christer Hallin | 2000-02-29 |
| 5900648 | Semiconductor device having an insulated gate | Christopher Harris, Andrei Konstantinov | 1999-05-04 |
| 5851908 | Method for introduction of an impurity dopant in SiC, a semiconductor device formed by the method and a use of highly doped amorphous layer as a source for dopant diffusion into SiC | Christopher Harris, Andrei Konstantinov | 1998-12-22 |
| 5847414 | Semiconductor device having a hetero-junction between SiC and a Group 3B-nitride | Christopher Harris, Andrey Konstantinov | 1998-12-08 |
| 5831292 | IGBT having a vertical channel | Christopher Harris, Andrei Konstantinov | 1998-11-03 |
| 5804482 | Method for producing a semiconductor device having a semiconductor layer of SiC | Andrei Konstantinov | 1998-09-08 |
| 5792257 | Method for protecting the susceptor during epitaxial growth by CVD and a device for epitaxial growth by CVD | Olle Kordina, Christer Hallin | 1998-08-11 |
| 5704985 | Device and a method for epitaxially growing objects by CVD | Olle Kordina, Christer Hallin | 1998-01-06 |
| 5654208 | Method for producing a semiconductor device having a semiconductor layer of SiC comprising a masking step | Christopher Harris, Andrei Konstantinov | 1997-08-05 |
| 5650638 | Semiconductor device having a passivation layer | Christopher Harris, Andrei Konstantinov | 1997-07-22 |
| 4893354 | System and method for self-compensating fiber-optic data transmission at temperatures up to 200 degrees C. | Rune Tenghamn | 1990-01-09 |