| 5316957 |
Method of forming a recessed contact bipolar transistor |
David B. Spratt, Robert L. Virkus, Robert H. Eklund |
1994-05-31 |
| 5075241 |
Method of forming a recessed contact bipolar transistor and field effect device |
David B. Spratt, Robert L. Virkus, Robert H. Eklund |
1991-12-24 |
| 5019525 |
Method for forming a horizontal self-aligned transistor |
Robert L. Virkus, David B. Spratt |
1991-05-28 |
| 4985744 |
Method for forming a recessed contact bipolar transistor and field effect transistor |
David B. Spratt, Robert L. Virkus, Robert H. Eklund |
1991-01-15 |
| 4982263 |
Anodizable strain layer for SOI semiconductor structures |
David B. Spratt, Robert L. Virkus, Kenneth E. Bean, Richard L. Yeakley |
1991-01-01 |
| 4897703 |
Recessed contact bipolar transistor and method |
David B. Spratt, Robert L. Virkus, Robert H. Eklund |
1990-01-30 |
| 4897698 |
Horizontal structure thin film transistor |
David B. Spratt, James D. Guillory |
1990-01-30 |
| 4891103 |
Anadization system with remote voltage sensing and active feedback control capabilities |
David B. Spratt |
1990-01-02 |
| 4849370 |
Anodizable strain layer for SOI semiconductor structures |
David B. Spratt, Robert L. Virkus, Kenneth E. Bean, Richard L. Yeakley |
1989-07-18 |
| 4810667 |
Dielectric isolation using isolated silicon by limited anodization of an N+ epitaxially defined sublayer in the presence of a diffusion under film layer |
David B. Spratt, Richard L. Yeakley |
1989-03-07 |
| 4628591 |
Method for obtaining full oxide isolation of epitaxial islands in silicon utilizing selective oxidation of porous silicon |
David B. Spratt |
1986-12-16 |