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Monolithic segmented LED array architecture with islanded epitaxial growth |
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Quartz boat method and apparatus for thin film thermal treatment |
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Method and structure for processing thin film PV cells with improved temperature uniformity |
Robert D. Wieting, Jurg Schmizberger, Paul Alexander |
2013-03-19 |
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Active region of a light emitting device optimized for increased modulation speed operation |
Kostadin Dimitrov Djordjev, Chao-Kun Lin, Michael Renne Ty Tan |
2009-08-18 |
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Deep quantum well electro-absorption modulator |
David P. Bour, Michael Renne Ty Tan |
2008-10-28 |
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Method and structure for deep well structures for long wavelength active regions |
Michael Renne Ty Tan, David P. Bour |
2008-04-15 |
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Method for increasing maximum modulation speed of a light emitting device, and light emitting device with increased maximum modulation speed and quantum well structure thereof |
Michael Renne Ty Tan, Ying-Lan Chang |
2007-09-11 |
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Electroabsorption modulator |
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2006-11-28 |
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Method of making a long wavelength indium gallium arsenide nitride (InGaAsN) active region |
David P. Bour, Tetsuya Takeuchi, Ying-Lan Chang, Michael Renne Ty Tan, Scott W. Corzine |
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Material systems for semiconductor tunnel-junction structures |
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2006-04-25 |
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GaAs-based long-wavelength laser incorporating tunnel junction structure |
Michael Leary, Ying-Lan Chang |
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Method of fabricating active layers in a laser utilizing InP-based active regions |
Ying-Lan Chang |
2005-04-05 |
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Material systems for semiconductor tunnel-junction structures |
Yin-Lan Chang, Michael Leary, Michael Renne Ty Tan |
2004-07-20 |
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Method for producing a long wavelength indium gallium arsenide nitride(InGaAsN) active region |
David P. Bour, Tetsuya Takeuchi, Ying-Lan Chang, Michael Renne Ty Tan, Scott W. Corzine |
2004-06-29 |
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InP based high temperature lasers with InAsP quantum well layers and barrier layers of Gax(ALIn)1-xP |
Ying-Ian Chang, Scott W. Corzine, David P. Bour, Michael Renne Ty Tan |
2004-05-04 |
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Long-wavelength photonic device with GaAsSb quantum-well layer |
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