Issued Patents All Time
Showing 1–13 of 13 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6198115 | IGBT with reduced forward voltage drop and reduced switching loss | Richard Francis | 2001-03-06 |
| 6043112 | IGBT with reduced forward voltage drop and reduced switching loss | Richard Francis | 2000-03-28 |
| 5904510 | Power transistor device having ultra deep increased concentration region | Herbert J. Gould | 1999-05-18 |
| 5859465 | High voltage power schottky with aluminum barrier metal spaced from first diffused ring | Kyle Spring | 1999-01-12 |
| 5831318 | Radhard mosfet with thick gate oxide and deep channel region | Kyle Spring | 1998-11-03 |
| 5661314 | Power transistor device having ultra deep increased concentration | Herbert J. Gould | 1997-08-26 |
| 5654206 | Amorphous silicon layer for top surface of semiconductor device | — | 1997-08-05 |
| 5592006 | Gate resistor for IGBT | — | 1997-01-07 |
| 5523604 | Amorphous silicon layer for top surface of semiconductor device | — | 1996-06-04 |
| 5475252 | Process for manufacture of radiation resistant power MOSFET and radiation resistant power MOSFET | Kyle Spring | 1995-12-12 |
| 5338693 | Process for manufacture of radiation resistant power MOSFET and radiation resistant power MOSFET | Daniel M. Kinzer, Kyle Spring | 1994-08-16 |
| 4783694 | Integrated bipolar-MOS semiconductor device with common collector and drain | Rodney R. Stoltenburg | 1988-11-08 |
| 4506280 | Transistor with improved power dissipation capability | — | 1985-03-19 |