Issued Patents All Time
Showing 76–100 of 256 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11404407 | Implants to enlarge Schottky diode cross-sectional area for lateral current conduction | Sansaptak Dasgupta, Marko Radosavljevic, Paul B. Fischer, Walid M. Hafez | 2022-08-02 |
| 11398545 | Single-mask, high-q performance metal-insulator-metal capacitor (MIMCAP) | Kevin Lin | 2022-07-26 |
| 11387329 | Tri-gate architecture multi-nanowire confined transistor | Marko Radosavljevic, Sansaptak Dasgupta, Paul B. Fischer, Walid M. Hafez | 2022-07-12 |
| 11387328 | III-N tunnel device architectures and high frequency mixers employing a III-N tunnel device | Rahul Ramaswamy, Walid M. Hafez, Marko Radosavljevic, Sansaptak Dasgupta, Nidhi Nidhi | 2022-07-12 |
| 11387327 | Silicide for group III-Nitride devices and methods of fabrication | Sansaptak Dasgupta, Marko Radosavljevic, Paul B. Fischer, Walid M. Hafez | 2022-07-12 |
| 11380806 | Variable capacitance device with multiple two-dimensional electron gas (2DEG) layers | Harald Gossner, Peter Baumgartner, Uwe Hodel, Domagoj Siprak, Stephan Leuschner +3 more | 2022-07-05 |
| 11380679 | FET capacitor circuit architectures for tunable load and input matching | Marko Radosavljevic, Sansaptak Dasgupta, Paul B. Fischer, Walid M. Hafez, Nicholas James Harold McKubre | 2022-07-05 |
| 11373995 | Group III-nitride antenna diode | Harald Gossner, Peter Baumgartner, Uwe Hodel, Domagoj Siprak, Stephan Leuschner +3 more | 2022-06-28 |
| 11362172 | High aspect ratio non-planar capacitors formed via cavity fill | Marko Radosavljevic, Sansaptak Dasgupta | 2022-06-14 |
| 11362082 | Implanted substrate contact for in-process charging control | Paul B. Fischer, Walid M. Hafez, Marko Radosavljevic, Sansaptak Dasgupta | 2022-06-14 |
| 11355652 | Group III-nitride polarization junction diodes | Marko Radosavljevic, Sansaptak Dasgupta | 2022-06-07 |
| 11342232 | Fabrication of Schottky barrier diode using lateral epitaxial overgrowth | Sansaptak Dasgupta, Marko Radosavljevic, Paul B. Fischer, Walid M. Hafez | 2022-05-24 |
| 11335777 | Integrated circuit components with substrate cavities | Kevin Lin, Paul B. Fischer, Sansaptak Dasgupta, Marko Radosavljevic, Ibrahim Ban | 2022-05-17 |
| 11335801 | Group III-nitride (III-N) devices with reduced contact resistance and their methods of fabrication | Marko Radosavljevic, Sansaptak Dasgupta | 2022-05-17 |
| 11335800 | Work function based approaches to transistor threshold voltage tuning | Marko Radosavljevic, Sansaptak Dasgupta, Paul B. Fischer, Walid M. Hafez | 2022-05-17 |
| 11329132 | Transistor with polarization layer superlattice for target threshold voltage tuning | Marko Radosavljevic, Sansaptak Dasgupta, Paul B. Fischer, Walid M. Hafez | 2022-05-10 |
| 11323092 | Film bulk acoustic resonator (FBAR) devices for high frequency RF filters | Sansaptak Dasgupta, Marko Radosavljevic | 2022-05-03 |
| 11302808 | III-V transistors with resistive gate contacts | Marko Radosavljevic, Sansaptak Dasgupta | 2022-04-12 |
| 11295992 | Tunnel polarization junction III-N transistors | Marko Radosavljevic, Sansaptak Dasgupta | 2022-04-05 |
| 11233053 | Group III-nitride (III-N) devices with reduced contact resistance and their methods of fabrication | Marko Radosavljevic, Sansaptak Dasgupta | 2022-01-25 |
| 11222982 | Methods and apparatus to form silicon-based transistors on group III-nitride materials using aspect ratio trapping | Marko Radosavljevic, Sansaptak Dasgupta | 2022-01-11 |
| 11218133 | Film bulk acoustic resonator (FBAR) devices for high frequency RF filters | Sansaptak Dasgupta, Bruce A. Block, Paul B. Fischer, Marko Radosavljevic | 2022-01-04 |
| 11205717 | Epitaxially fabricated heterojunction bipolar transistors | Sansaptak Dasgupta, Marko Radosavljevic, Paul B. Fischer | 2021-12-21 |
| 11195944 | Gallium nitride (GaN) transistor structures on a substrate | Sansaptak Dasgupta, Sanaz K. Gardner, Marko Radosavljevic, Seung Hoon Sung, Robert S. Chau | 2021-12-07 |
| 11183613 | Group III-nitride light emitting devices including a polarization junction | Sansaptak Dasgupta, Marko Radosavljevic | 2021-11-23 |