Issued Patents All Time
Showing 351–375 of 380 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| RE40352 | Switch mode power supply with reduced switching losses | Gerald Deboy, Martin März, Hans Weber | 2008-06-03 |
| 7372103 | MOS field plate trench transistor device | Markus Zundel | 2008-05-13 |
| 7329921 | Lateral semiconductor transistor | — | 2008-02-12 |
| 7274077 | Trench transistor | Ralf Henninger | 2007-09-25 |
| 7253471 | Semiconductor structure having thick stabilization layer | — | 2007-08-07 |
| 7211860 | Semiconductor component including plural trench transistors with intermediate mesa regions | Markus Zundel | 2007-05-01 |
| 7186618 | Power transistor arrangement and method for fabricating it | Martin Pölzl, Oliver Häberlen, Manfred Kotek, Walter Rieger | 2007-03-06 |
| 7173306 | Vertical semiconductor component having a drift zone having a field electrode, and method for fabricating such a drift zone | Ralf Henninger, Frank Pfirsch, Markus Zundel, Jenoe Tihanyi | 2007-02-06 |
| 7091573 | Power transistor | Jenoe Tihanyi, Ralf Henninger, Joachim Krumrey, Martin Poelzl, Walter Rieger | 2006-08-15 |
| 7060562 | Method for fabricating gate electrodes in a field plate trench transistor, and field plate trench transistor | Ralf Henninger, Uli Hiller, Jan Ropohl | 2006-06-13 |
| 7005351 | Method for fabricating a transistor configuration including trench transistor cells having a field electrode, trench transistor, and trench configuration | Ralf Henninger, Joachim Krumrey, Walter Rieger, Martin Pölzl, Heimo Hofer | 2006-02-28 |
| 6998678 | Semiconductor arrangement with a MOS-transistor and a parallel Schottky-diode | Wolfgang Werner, Joachim Krumrey, Walter Rieger | 2006-02-14 |
| 6927101 | Field-effect-controllable semiconductor component and method for fabricating the component | Ralf Henninger, Martin Pölzl, Walter Rieger | 2005-08-09 |
| 6911693 | MOS transistor device | Markus Zundel | 2005-06-28 |
| 6903416 | Trench transistors and methods for fabricating trench transistors | Ralf Henninger | 2005-06-07 |
| 6891223 | Transistor configuration with a structure for making electrical contact with electrodes of a trench transistor cell | Joachim Krumrey, Ralf Henninger, Martin Pölzl, Walter Rieger | 2005-05-10 |
| 6885062 | MOS transistor device with a locally maximum concentration region between the source region and the drain region | Markus Zundel, Roberta Lantier | 2005-04-26 |
| 6882004 | Semiconductor component, trench structure transistor, trench MOSFET, IGBT, and field-plate transistor | Markus Zundel | 2005-04-19 |
| 6833584 | Trench power semiconductor | Ralf Henninger, Manfred Kotek, Joost Larik, Markus Zundel | 2004-12-21 |
| 6806533 | Semiconductor component with an increased breakdown voltage in the edge area | Ralf Henninger, Joachim Krumrey, Markus Zundel, Walter Rieger, Martin Pölzl | 2004-10-19 |
| 6720616 | Trench MOS transistor | Manfred Kotek, Joost Larik, Frank Pfirsch | 2004-04-13 |
| 6690062 | Transistor configuration with a shielding electrode outside an active cell array and a reduced gate-drain capacitance | Ralf Henninger, Joachim Krumrey, Walter Rieger, Martin Poelzl | 2004-02-10 |
| 6670244 | Method for fabricating a body region for a vertical MOS transistor arrangement having a reduced on resistivity | Helmut Gassel, Werner Kanert, Helmut Strack, Herbert Pairitsch | 2003-12-30 |
| 6649974 | Field-effect controlled semiconductor device having a non-overlapping gate electrode and drift region and its manufacturing method | Wolfgang Werner | 2003-11-18 |
| 6576953 | Vertical semiconductor component with source-down design and corresponding fabrication method | — | 2003-06-10 |