Issued Patents All Time
Showing 126–145 of 145 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6878997 | Compensation component and method for fabricating the component | — | 2005-04-12 |
| 6815769 | Power semiconductor component, IGBT and field-effect transistor | Carsten Schäffer | 2004-11-09 |
| 6803627 | Reverse-blocking power semiconductor component having a region short-circuited to a drain-side part of a body zone | — | 2004-10-12 |
| 6803609 | Bipolar high-voltage power component | Wolfgang Werner | 2004-10-12 |
| 6770917 | High-voltage diode | Reiner Barthelmess, Anton Mauder, Gerhard Schmidt | 2004-08-03 |
| 6762440 | Semiconductor component and corresponding test method | Herbert Pairitsch | 2004-07-13 |
| 6720616 | Trench MOS transistor | Franz Hirler, Manfred Kotek, Joost Larik | 2004-04-13 |
| 6541818 | Field-effect transistor configuration with a trench-shaped gate electrode and an additional highly doped layer in the body region | Carsten Schäffer | 2003-04-01 |
| 6531748 | Semiconductor power component with a reduced parasitic bipolar transistor | — | 2003-03-11 |
| 6465869 | Compensation component and process for producing the compensation component | Dirk Ahlers | 2002-10-15 |
| 6445048 | Semiconductor configuration having trenches for isolating doped regions | — | 2002-09-03 |
| 6320205 | Edge termination for a semiconductor component, a schottky diode having an edge termination, and a method for producing the schottky diode | Roland Rupp | 2001-11-20 |
| 6201279 | Semiconductor component having a small forward voltage and high blocking ability | — | 2001-03-13 |
| 6147381 | Field effect-controllable semiconductor component | Franz Hirler, Wolfgang Werner | 2000-11-14 |
| 6066864 | Thyristor with integrated dU/dt protection | Martin Ruff, Hans-Joachim Schulze | 2000-05-23 |
| 6064103 | Device with a P-N junction and a means of reducing the risk of breakdown of the junction | — | 2000-05-16 |
| 5736445 | Method for producing at least two transsistors in a semiconductor body | — | 1998-04-07 |
| 5455434 | Thyristor with breakdown region | — | 1995-10-03 |
| 5420045 | Process for manufacturing thyristor with adjustable breakover voltage | Hans-Joachim Schulze, Heinz Mitlehner | 1995-05-30 |
| 5204273 | Method for the manufacturing of a thyristor with defined lateral resistor | Reinhold Kuhnert, Heinz Mitlehner, Hans-Joachim Schulze | 1993-04-20 |