NS

Nobuyuki Sugii

HI Hitachi: 29 patents #976 of 28,497Top 4%
RE Renesas Electronics: 11 patents #284 of 4,529Top 7%
RT Renesas Technology: 8 patents #341 of 3,337Top 15%
IC International Superconductivity Technology Center: 3 patents #44 of 245Top 20%
TC Tohoku Electric Power Company: 1 patents #65 of 246Top 30%
FC Furukawa Electric Co.: 1 patents #1,242 of 2,370Top 55%
HC Hokkaido Electric Power Co.: 1 patents #23 of 84Top 30%
KT Kabushiki Kaisha Toshiba: 1 patents #13,537 of 21,451Top 65%
RS Renesas Eastern Japan Semiconductor: 1 patents #25 of 82Top 35%
Overall (All Time): #53,655 of 4,157,543Top 2%
50
Patents All Time

Issued Patents All Time

Showing 26–50 of 50 patents

Patent #TitleCo-InventorsDate
8143668 SiGe MOSFET semiconductor device with sloped source/drain regions Yusuke Morita, Ryuta Tsuchiya, Takashi Ishigaki, Shinichiro Kimura 2012-03-27
7944024 Semiconductor device and manufacturing method of the same Masao Kondo, Yoshinobu Kimura 2011-05-17
7890898 Method for semiconductor circuit Hiroyuki Yoshimoto, Shinichi Saito, Digh Hisamoto 2011-02-15
7868425 Semiconductor device and manufacturing method of the same Masao Kondo, Yoshinobu Kimura 2011-01-11
7812398 Semiconductor device including a P-type field-effect transistor Shinichi Saito, Digh Hisamoto, Yoshinobu Kimura, Ryuta Tsuchiya 2010-10-12
7579229 Semiconductor device and semiconductor substrate Kiyokazu Nakagawa, Shinya Yamaguchi, Masanobu Miyao 2009-08-25
7531853 Semiconductor device and manufacturing method of the same Shinichi Saito, Digh Hisamoto, Yoshinobu Kimura, Ryuta Tsuchiya 2009-05-12
7436046 Semiconductor device and manufacturing method of the same Masao Kondo, Yoshinobu Kimura 2008-10-14
7317207 Semiconductor device, method of making the same and liquid crystal display device Shinya Yamaguchi, Masanobu Miyao, Seang-kee Park, Kiyokazu Nakagawa 2008-01-08
7095043 Semiconductor device, semiconductor circuit module and manufacturing method of the same Katsuya Oda, Makoto Miura, Isao Suzumura, Katsuyoshi Washio 2006-08-22
7045412 Field-effect type semiconductor device for power amplifier Masatoshi Morikawa, Isao Yoshida, Katsuyoshi Washio 2006-05-16
7029988 Fabrication method and device structure of shallow trench insulation for silicon wafer containing silicon-germanium Kazuhiro Ohnishi, Takahiro Onai 2006-04-18
6936875 Insulated-gate field-effect transistor, method of fabricating same, and semiconductor device employing same Kazuhiro Ohnishi, Katsuyoshi Washio 2005-08-30
6903372 Semiconductor device, method of making the same and liquid crystal display device Shinya Yamaguchi, Masanobu Miyao, Seang-kee Park, Kiyokazu Nakagawa 2005-06-07
6897129 Fabrication method of semiconductor device and semiconductor device Yasuichi Kondo, Wataru Hirasawa 2005-05-24
6888162 Electronic apparatus having polycrystalline semiconductor thin film structure Shinya Yamaguchi, Masanobu Miyao, Kiyokazu Nakagawa 2005-05-03
6878606 Fabrication method and device structure of shallow trench insulation for silicon wafer containing silicon-germanium Kazuhiro Ohnishi, Takahiro Onai 2005-04-12
6815707 Field-effect type semiconductor device for power amplifier Masatoshi Morikawa, Isao Yoshida, Katsuyoshi Washio 2004-11-09
6727514 Thin-film semiconductor integrated circuit device and picture display device with using thereof and manufacturing method thereof Seong-Kee Park, Kiyokazu Nakagawa, Shinya Yamaguchi 2004-04-27
6723541 Method of producing semiconductor device and semiconductor substrate Shinya Yamaguchi, Katsuyoshi Washio 2004-04-20
6545294 ELECTRONIC APPARATUS HAVING SEMICONDUCTOR DEVICE INCLUDING PLURALITY OF TRANSISTORS FORMED ON A POLYCRYSTALLINE LAYERED STRUCTURE IN WHICH THE NUMBER OF CRYSTAL GRAINS IN EACH POLYCRYSTALLINE LAYER IS GRADUALLY REDUCED FROM LOWER TO UPPER LAYER Shinya Yamaguchi, Masanobu Miyao, Kiyokazu Nakagawa 2003-04-08
6529304 Optical communication equipment and system Yoshinobu Kimura, Masanobu Miyao, Kiyokazu Nakagawa, Takuya Maruizumi 2003-03-04
5468806 Method of manufacturing an oxide superconductor thin film Kiyoshi Yamamoto, Koichi Kubo, Michiharu Ichikawa, Hisao Yamauchi 1995-11-21
5446017 Superconductive copper-containing oxide materials of the formula A.sub.p B.sub.q Cu.sub.2 O.sub.4.+-.r Takeshi Sakurai, Seiji Adachi, Michiharu Ichikawa, Yuji Yaegashi, Hisao Yamauchi +2 more 1995-08-29
5376309 Boride materials for electronic elements and method of preparing the same Kazuyuki Hamada, Mitsunobu Wakata, Kohichi Kubo, Kiyotaka Matsuura, Hisao Yamauchi 1994-12-27