KN

Kiyokazu Nakagawa

HI Hitachi: 11 patents #3,813 of 28,497Top 15%
FC Fuji Electric Co.: 2 patents #952 of 2,643Top 40%
LE Leapers: 2 patents #10 of 19Top 55%
RE Renesas Electronics: 1 patents #2,739 of 4,529Top 65%
RT Renesas Technology: 1 patents #1,991 of 3,337Top 60%
AT Agency Of Industrial Science And Technology: 1 patents #568 of 1,778Top 35%
📍 Livonia, MI: #64 of 1,586 inventorsTop 5%
🗺 Michigan: #4,319 of 86,293 inventorsTop 6%
Overall (All Time): #229,562 of 4,157,543Top 6%
19
Patents All Time

Issued Patents All Time

Showing 1–19 of 19 patents

Patent #TitleCo-InventorsDate
12410989 Sight mount and related method of use Tai-lai Ding, Tat Shing Yu 2025-09-09
12281873 Sight mount and related method of use Tai-lai Ding, Tat Shing Yu 2025-04-22
10176981 Semiconductor device and semiconductor device manufacturing method Katsunori Ueno 2019-01-08
9972499 Method for forming metal-semiconductor alloy using hydrogen plasma Haruo Nakazawa, Masaaki Ogino, Tsunehiro Nakajima, Kenichi Iguchi, Masaaki Tachioka 2018-05-15
8304810 Semiconductor device and semiconductor substrate having selectively etched portions filled with silicon germanium Nobuyuki Sugii, Shinya Yamaguchi, Masanobu Miyao 2012-11-06
7579229 Semiconductor device and semiconductor substrate Nobuyuki Sugii, Shinya Yamaguchi, Masanobu Miyao 2009-08-25
7317207 Semiconductor device, method of making the same and liquid crystal display device Shinya Yamaguchi, Masanobu Miyao, Nobuyuki Sugii, Seang-kee Park 2008-01-08
6903372 Semiconductor device, method of making the same and liquid crystal display device Shinya Yamaguchi, Masanobu Miyao, Nobuyuki Sugii, Seang-kee Park 2005-06-07
6888162 Electronic apparatus having polycrystalline semiconductor thin film structure Shinya Yamaguchi, Masanobu Miyao, Nobuyuki Sugii 2005-05-03
6727514 Thin-film semiconductor integrated circuit device and picture display device with using thereof and manufacturing method thereof Seong-Kee Park, Nobuyuki Sugii, Shinya Yamaguchi 2004-04-27
6545294 ELECTRONIC APPARATUS HAVING SEMICONDUCTOR DEVICE INCLUDING PLURALITY OF TRANSISTORS FORMED ON A POLYCRYSTALLINE LAYERED STRUCTURE IN WHICH THE NUMBER OF CRYSTAL GRAINS IN EACH POLYCRYSTALLINE LAYER IS GRADUALLY REDUCED FROM LOWER TO UPPER LAYER Shinya Yamaguchi, Masanobu Miyao, Nobuyuki Sugii 2003-04-08
6529304 Optical communication equipment and system Yoshinobu Kimura, Masanobu Miyao, Nobuyuki Sugii, Takuya Maruizumi 2003-03-04
5689494 Surface atom fabrication method and apparatus Masakazu Ichikawa, Shigeyuki Hosoki, Fumihiko Uchida, Shigeo Kato, Yoshihisa Fujisaki +5 more 1997-11-18
5523592 Semiconductor optical device, manufacturing method for the same, and opto-electronic integrated circuit using the same Akio Nishida, Toshikazu Shimada 1996-06-04
5416331 Surface atom fabrication method and apparatus Masakazu Ichikawa, Shigeyuki Hosoki, Fumihiko Uchida, Shigeo Kato, Yoshihisa Fujisaki +5 more 1995-05-16
5338942 Semiconductor projections having layers with different lattice constants Akio Nishida, Eiichi Murakami 1994-08-16
5241197 Transistor provided with strained germanium layer Eiichi Murakami, Takashi Ohshima, Hiroyuki Eto, Masanobu Miyao 1993-08-31
5066355 Method of producing hetero structure Masanobu Miyao, Kiyonori Ohyu, Eiichi Murakami, Takashi Ohshima 1991-11-19
4785340 Semiconductor device having doping multilayer structure Akitoshi Ishizaka, Yasuhiro Shiraki, Yoshimasa Murayama 1988-11-15