KZ

Kunliang Zhang

HT Headway Technologies: 123 patents #6 of 309Top 2%
KT Kabushiki Kaisha Toshiba: 9 patents #3,402 of 21,451Top 20%
Tdk: 9 patents #675 of 3,796Top 20%
MT Magic Technologies: 1 patents #40 of 54Top 75%
📍 Fremont, CA: #44 of 9,298 inventorsTop 1%
🗺 California: #1,292 of 386,348 inventorsTop 1%
Overall (All Time): #8,097 of 4,157,543Top 1%
132
Patents All Time

Issued Patents All Time

Showing 76–100 of 132 patents

Patent #TitleCo-InventorsDate
8289661 CPP structure with enhanced GMR ratio Min Li, Yu-Hsia Chen, Chyu-Jiuh Torng 2012-10-16
8289663 Ultra low RA (resistance x area) sensors having a multilayer non-magnetic spacer between pinned and free layers Tong Zhao, Hui-Chuan Wang, Min Li 2012-10-16
8274811 Assisting FGL oscillations with perpendicular anisotropy for MAMR Min Li, Yuchen Zhou 2012-09-25
8259420 TMR device with novel free layer structure Tong Zhao, Hui-Chuan Wang, Min Li 2012-09-04
8228643 Method for manufacturing a magneto-resistance effect element and magnetic recording and reproducing apparatus Hiromi Yuasa, Hideaki Fukuzawa, Yoshihiko Fuji, Shuichi Murakami, Michiko Hara +2 more 2012-07-24
8208219 Modified field generation layer for microwave assisted magnetic recording Min Li, Yuchen Zhou 2012-06-26
8203809 Enhanced hard bias in thin film magnetoresistive sensors with perpendicular easy axis growth of hard bias and strong shield-hard bias coupling Yuchen Zhou, Kenichi Takano 2012-06-19
8203389 Field tunable spin torque oscillator for RF signal generation Yuchen Zhou, Pokang Wang, Joe Smyth 2012-06-19
8202572 TMR device with improved MgO barrier Tong Zhao, Hui-Chuan Wang, Min Li 2012-06-19
8184411 MTJ incorporating CoFe/Ni multilayer film with perpendicular magnetic anisotropy for MRAM application Min Li, Pokang Wang, Yuchen Zhou, Cheng T. Horng, Ru-Ying Tong 2012-05-22
8164862 Seed layer for TMR or CPP-GMR sensor Tong Zhao, Hui-Chuan Wang, Min Li 2012-04-24
8107201 Hard bias design for extra high density recording Yun-Fei Li, Chyu-Jiuh Torng, Chen-Jung Chien 2012-01-31
8105703 Process for composite free layer in CPP GMR or TMR device Hui-Chuan Wang, Min Li, Tong Zhao, Chyu-Jiuh Torng 2012-01-31
8064244 Thin seeded Co/Ni multilayer film with perpendicular anisotropy for spintronic device applications Min Li, Yuchen Zhou, Soichi Oikawa, Kenichiro Yamada, Katsuhiko Koui 2011-11-22
8059374 TMR device with novel free layer structure Tong Zhao, Hui-Chuan Wang, Min Li 2011-11-15
8031445 Low noise magneto-resistive sensor utilizing magnetic noise cancellation Yuchen Zhou, Yu-Hsai Chen, Tong Zhao, Moris Dovek 2011-10-04
8031441 CPP device with an enhanced dR/R ratio Min Li, Moris Dovek, Yue Liu 2011-10-04
8023218 Electric field assisted magnetic recording Yuchen Zhou, Kowang Liu, Erhard Schreck 2011-09-20
8012316 FCC-like trilayer AP2 structure for CPP GMR EM improvement Dan Abels, Min Li, Chyu-Jiuh Torng, Chen-Jung Chien, Yu-Hsia Chen 2011-09-06
8008740 Low resistance tunneling magnetoresistive sensor with composite inner pinned layer Tong Zhao, Hui-Chuan Wang, Yu-Hsia Chen, Min Li 2011-08-30
8004794 Perpendicular magnetic recording head laminated with AFM-FM phase change material Yuchen Zhou, Kenichi Takano, Kowang Liu, Liejie Guan, Moris Dovek +1 more 2011-08-23
7990660 Multiple CCP layers in magnetic read head devices Min Li, Yu-Hsia Chen 2011-08-02
7986498 TMR device with surfactant layer on top of CoFexBy/CoFez inner pinned layer Hui-Chuan Wang, Tong Zhao, Min Li 2011-07-26
7978439 TMR or CPP structure with improved exchange properties Hui-Chuan Wang, Tong Zhao, Min Li 2011-07-12
7978442 CPP device with a plurality of metal oxide templates in a confining current path (CCP) spacer Min Li, Yue Liu, Hideaki Fukuzawa, Hiromi Yuasa 2011-07-12