Issued Patents All Time
Showing 1–25 of 25 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12387785 | Structures for three-terminal memory cells | Eng Huat Toh, Shyue Seng Tan | 2025-08-12 |
| 12363892 | Non-volatile memory elements with one-time or multiple-time programmability | Eng Huat Toh, Sriram Balasubramanian, Shyue Seng Tan | 2025-07-15 |
| 12349608 | Memory devices and methods of making the same | Eng Huat Toh, Shyue Seng Tan | 2025-07-01 |
| 12201039 | Non-volatile memory device with filament confinement | Eng Huat Toh, Shyue Seng Tan | 2025-01-14 |
| 12193243 | Lateral multi-bit memory devices and methods of making the same | Eng Huat Toh, Shyue Seng Tan | 2025-01-07 |
| 12101944 | Semiconductor memory devices | Eng Huat Toh, Shyue Seng Tan | 2024-09-24 |
| 11991938 | Memory devices and methods of forming memory devices | Eng Huat Toh, Shyue Seng Tan | 2024-05-21 |
| 11844292 | Memory devices having an electrode with tapered sides | Eng Huat Toh, Shyue Seng Tan | 2023-12-12 |
| 11793004 | Resistive random access memory devices | Eng Huat Toh, Shyue Seng Tan | 2023-10-17 |
| 11502250 | Memory devices and methods of forming memory devices | Eng Huat Toh, Shyue Seng Tan | 2022-11-15 |
| 11476303 | Multi-level cell configurations for non-volatile memory elements in a bitcell | Eng Huat Toh, Shyue Seng Tan | 2022-10-18 |
| 11462552 | Semiconductor devices with memory cells | Wei Chang, Eng Huat Toh, Shyue Seng Tan | 2022-10-04 |
| 11444125 | Memory devices and methods of forming memory devices | Eng Huat Toh, Shyue Seng Tan | 2022-09-13 |
| 11398525 | Resistive memory elements having conductive islands embedded within the switching layer | Eng Huat Toh, Shyue Seng Tan | 2022-07-26 |
| 11393979 | Non-volatile memory elements with filament confinement | Eng Huat Toh, Bin Liu, Shyue Seng Tan | 2022-07-19 |
| 11349071 | Memory device and a method for forming the memory device | Eng Huat Toh, Shyue Seng Tan, Steven R. Soss | 2022-05-31 |
| 11335852 | Resistive random access memory devices | Eng Huat Toh, Shyue Seng Tan | 2022-05-17 |
| 11302702 | Non-volatile memory elements with one-time or multiple-time programmability | Eng Huat Toh, Sriram Balasubramanian, Shyue Seng Tan | 2022-04-12 |
| 11217747 | Memory devices and methods of forming memory devices | Eng Huat Toh, Shyue Seng Tan | 2022-01-04 |
| 11211555 | Memory device and a method for forming the memory device | Eng Huat Toh, Shyue Seng Tan | 2021-12-28 |
| 11152380 | Memory device and a method for forming the memory device | Eng Huat Toh, Bin Liu, Shyue Seng Tan | 2021-10-19 |
| 11069743 | Non-volatile memory elements with a multi-level cell configuration | Eng Huat Toh, Shyue Seng Tan | 2021-07-20 |
| 11050426 | Logic gate devices and methods of forming a logic gate device | Eng Huat Toh, Shyue Seng Tan | 2021-06-29 |
| 10847720 | Non-volatile memory elements with filament confinement | Eng Huat Toh, Bin Liu, Shyue Seng Tan | 2020-11-24 |
| 10312442 | Non-volatile memory devices, RRAM devices and methods for fabricating RRAM devices with magnesium oxide insulator layers | Danny Pak-Chum Shum, Wen Siang Lew | 2019-06-04 |