Issued Patents All Time
Showing 26–47 of 47 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10243039 | Super-junction semiconductor power devices with fast switching capability | Peter Almern Losee, David Alan Lilienfeld, Reza Ghandi | 2019-03-26 |
| 10211304 | Semiconductor device having gate trench in JFET region | Peter Almern Losee | 2019-02-19 |
| 10199465 | Cellular layout for semiconductor devices | Peter Almern Losee | 2019-02-05 |
| 10192958 | Cellular layout for semiconductor devices | Peter Almern Losee | 2019-01-29 |
| 10103540 | Method and system for transient voltage suppression devices with active control | Avinash Srikrishnan Kashyap, Peter Micah Sandvik, Joe W. Kirstein | 2018-10-16 |
| 10096681 | Electric field shielding in silicon carbide metal-oxide-semiconductor (MOS) device cells | Peter Almern Losee | 2018-10-09 |
| 10056457 | Electric field shielding in silicon carbide metal-oxide-semiconductor (MOS) device cells using channel region extensions | Peter Almern Losee | 2018-08-21 |
| 10014388 | Transient voltage suppression devices with symmetric breakdown characteristics | Victor Torres, Reza Ghandi, David Alan Lilienfeld, Avinash Srikrishnan Kashyap | 2018-07-03 |
| 10002920 | System and method for edge termination of super-junction (SJ) devices | Reza Ghandi, David Alan Lilienfeld, Peter Almern Losee | 2018-06-19 |
| 9899512 | Silicon carbide device and method of making thereof | Peter Almern Losee, Ljubisa Dragoljub Stevanovic, Gregory Thomas Dunne | 2018-02-20 |
| 9806157 | Structure and method for transient voltage suppression devices with a two-region base | Avinash Srikrishnan Kashyap | 2017-10-31 |
| 9748341 | Metal-oxide-semiconductor (MOS) devices with increased channel periphery | Peter Almern Losee | 2017-08-29 |
| 9735263 | Transistor and switching system comprising silicon carbide and oxides of varying thicknesses, and method for providing the same | Stephen Daley Arthur, Kevin Sean Matocha, Ramakrishna Rao, Peter Almern Losee | 2017-08-15 |
| 9735237 | Active area designs for silicon carbide super-junction power devices | Peter Almern Losee, Reza Ghandi | 2017-08-15 |
| 9716144 | Semiconductor devices having channel regions with non-uniform edge | Peter Almern Losee | 2017-07-25 |
| 9704949 | Active area designs for charge-balanced diodes | Reza Ghandi, Peter Almern Losee, David Alan Lilienfeld | 2017-07-11 |
| 9633998 | Semiconductor device and method for making the same | Stanislav Ivanovich Soloviev, Ahmed Elasser, Alexey Vert, Peter Almern Losee | 2017-04-25 |
| 9570560 | Diffused junction termination structures for silicon carbide devices | Qingchun Zhang, Anant Agarwal, Tangali S. Sudarshan | 2017-02-14 |
| 9406762 | Semiconductor device with junction termination extension | Stephen Daley Arthur, Peter Almern Losee, Kevin Sean Matocha, Richard Joseph Saia, Zachary Matthew Stum +3 more | 2016-08-02 |
| 9123798 | Insulating gate field effect transistor device and method for providing the same | Stephen Daley Arthur, Kevin Sean Matocha, Ramakrishna Rao, Peter Almern Losee | 2015-09-01 |
| 9024328 | Metal-oxide-semiconductor (MOS) devices with increased channel periphery and methods of manufacture | Peter Almern Losee | 2015-05-05 |
| 8637386 | Diffused junction termination structures for silicon carbide devices and methods of fabricating silicon carbide devices incorporating same | Qingchun Zhang, Anant Agarwal, Tangali S. Sudarshan | 2014-01-28 |