Issued Patents All Time
Showing 26–50 of 57 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6744797 | Semiconductor laser device | Toshiaki Kuniyasu | 2004-06-01 |
| 6738403 | Semiconductor laser element and semiconductor laser | Toshiaki Kuniyasu, Toshiro Hayakawa | 2004-05-18 |
| 6709513 | Substrate including wide low-defect region for use in semiconductor element | Toshiaki Kuniyasu, Mitsugu Wada, Yoshinori Hotta | 2004-03-23 |
| 6693941 | Semiconductor laser apparatus | Yoji Okazaki | 2004-02-17 |
| 6690698 | Semiconductor laser device including arrow structure precisely formed to suppress P-As interdiffusion and Al oxidation | — | 2004-02-10 |
| 6668002 | Semiconductor laser device including ARROW structure formed without P-As interdiffusion and Al oxidation | — | 2003-12-23 |
| 6661821 | Semiconductor laser element having great bandgap difference between active layer and optical waveguide layers, and including arrow structure formed without P-As interdiffusion | — | 2003-12-09 |
| 6643306 | Semiconductor laser device in which compressive strain active layer is sandwiched between tensile strain optical waveguide layers and average strain is limited | — | 2003-11-04 |
| 6625190 | Semiconductor laser device having thickened impurity-doped aluminum-free optical waveguide layers | Toshiro Hayakawa, Mitsugu Wada | 2003-09-23 |
| 6621845 | Semiconductor laser device which includes AlGaAs optical waveguide layer being formed over internal stripe groove and having controlled refractive index | — | 2003-09-16 |
| 6600770 | High-power semiconductor laser device having current confinement structure and index-guided structure and stably oscillating in single mode | Mitsugu Wada, Kenji Matsumoto | 2003-07-29 |
| 6580738 | High-power semiconductor laser device in which near-edge portions of active layer are removed | — | 2003-06-17 |
| 6560261 | Semiconductor laser device having InGaAs compressive-strain active layer, GaAsP tensile-strain barrier layers, and InGaP optical waveguide layers | Tsuyoshi Ohgoh | 2003-05-06 |
| 6553046 | High-power semiconductor laser device including resistance reduction layer which has intermediate energy gap | Fujio Akinaga, Mitsugu Wada | 2003-04-22 |
| 6546033 | InGaAsP semiconductor laser device in which near-edge portions are filled with non-absorbent layer, and lower optical waveguide layer includes InGaP intermediate layer | — | 2003-04-08 |
| 6535536 | Semiconductor laser element | Kenji Matsumoto, Mitsugu Wada | 2003-03-18 |
| 6516016 | High-power semiconductor laser device having current confinement structure and index-guided structure, and oscillating in transverse mode | Mitsugu Wada | 2003-02-04 |
| 6456638 | High-power short-wavelength semiconductor light emitting device having active layer with increased indium content | — | 2002-09-24 |
| 6452954 | High-power semiconductor laser device having current confinement structure and index-guided structure and oscillating in transverse mode | — | 2002-09-17 |
| 6400743 | High-power semiconductor laser device having current confinement structure and index-guided structure | Mitsugu Wada | 2002-06-04 |
| 6396863 | High-power semiconductor laser device having index-guided structure with InAlGaP current confinement layer | — | 2002-05-28 |
| 6344367 | Method of fabricating a diffraction grating | Masayuki Naya | 2002-02-05 |
| 6285695 | Semiconductor laser | Hideki Asano, Mitsugu Wada | 2001-09-04 |
| 6195373 | Index optical waveguide semiconductor laser | — | 2001-02-27 |
| 6127691 | Semiconductor laser device | Mitsugu Wada | 2000-10-03 |