Issued Patents All Time
Showing 1–21 of 21 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12300762 | Semiconductor light-emitting element and method for manufacturing semiconductor light-emitting element | Shinya FUKAHORI | 2025-05-13 |
| 11824137 | Semiconductor light-emitting element and method for manufacturing semiconductor light-emitting element | Shinya FUKAHORI | 2023-11-21 |
| 11616167 | Nitride semiconductor light-emitting element and method for manufacturing nitride semiconductor light-emitting element | Cyril PERNOT, Yusuke Matsukura, Yuta Furusawa | 2023-03-28 |
| 11444222 | Nitride semiconductor light-emitting element and production method for nitride semiconductor light-emitting element | Yuta Furusawa, Yusuke Matsukura, Cyril PERNOT | 2022-09-13 |
| 11367807 | Nitride semiconductor light-emitting element | Yusuke Matsukura, Yuta Furusawa | 2022-06-21 |
| 11227974 | Nitride semiconductor light-emitting element and production method for nitride semiconductor light-emitting element | Yuta Furusawa, Yusuke Matsukura, Cyril PERNOT | 2022-01-18 |
| 7394478 | Exposure system | — | 2008-07-01 |
| 6973109 | Semiconductor laser device having strain buffer layer between compressive-strain quantum well layer and tensile-strain barrier layer | Toshiaki Fukunaga | 2005-12-06 |
| 6876688 | Semiconductor laser and method of manufacturing the same | Toshiro Hayakawa, Toshiaki Fukunaga | 2005-04-05 |
| 6797416 | GaN substrate formed under controlled growth condition over GaN layer having discretely formed pits | Toshiaki Kuniyasu, Toshiaki Fukunaga | 2004-09-28 |
| 6709513 | Substrate including wide low-defect region for use in semiconductor element | Toshiaki Fukunaga, Toshiaki Kuniyasu, Yoshinori Hotta | 2004-03-23 |
| 6625190 | Semiconductor laser device having thickened impurity-doped aluminum-free optical waveguide layers | Toshiro Hayakawa, Toshiaki Fukunaga | 2003-09-23 |
| 6600770 | High-power semiconductor laser device having current confinement structure and index-guided structure and stably oscillating in single mode | Toshiaki Fukunaga, Kenji Matsumoto | 2003-07-29 |
| 6553046 | High-power semiconductor laser device including resistance reduction layer which has intermediate energy gap | Fujio Akinaga, Toshiaki Fukunaga | 2003-04-22 |
| 6535536 | Semiconductor laser element | Toshiaki Fukunaga, Kenji Matsumoto | 2003-03-18 |
| 6516016 | High-power semiconductor laser device having current confinement structure and index-guided structure, and oscillating in transverse mode | Toshiaki Fukunaga | 2003-02-04 |
| 6400743 | High-power semiconductor laser device having current confinement structure and index-guided structure | Toshiaki Fukunaga | 2002-06-04 |
| 6285695 | Semiconductor laser | Hideki Asano, Toshiaki Fukunaga | 2001-09-04 |
| 6127691 | Semiconductor laser device | Toshiaki Fukunaga | 2000-10-03 |
| 6028874 | Semiconductor laser | Toshiaki Fukunaga | 2000-02-22 |
| 5995528 | Semiconductor laser | Toshiaki Fukunaga | 1999-11-30 |