TK

Toshiaki Kuniyasu

Fujitsu Limited: 13 patents #2,362 of 24,456Top 10%
FU Fujifilm: 5 patents #1,507 of 4,519Top 35%
Overall (All Time): #254,559 of 4,157,543Top 7%
18
Patents All Time

Issued Patents All Time

Showing 1–18 of 18 patents

Patent #TitleCo-InventorsDate
10842928 Adapter for blood dispensing Toshihito Kimura, Hirotaka Watano, Akira Wakabayashi, Hiroshi Makino 2020-11-24
10639625 Pipette tip and liquid injection method Toshihito Kimura, Tomonori Nishio, Kazuteru NISHIJIMA 2020-05-05
10101318 Measurement apparatus Kazuteru NISHIJIMA, Tomonori Nishio, Toshihito Kimura 2018-10-16
10092910 Container for centrifugal separation and its production method Tomonori Nishio, Kazuteru NISHIJIMA, Toshihito Kimura 2018-10-09
7309948 Ultrasonic transducer and method of manufacturing the same Akinori Harada, Takashi Nakamura 2007-12-18
7199509 Multilayered structure and method of manufacturing the same, and ultrasonic transducer Hiroshi Maeda, Kazuhiro Nishida, Takayuki Fujiwara 2007-04-03
7061166 Laminated structure and method of manufacturing the same 2006-06-13
7054135 Multilayered structure, multilayered structure array and method of manufacturing the same 2006-05-30
6999486 Semiconductor laser element and semiconductor laser Toshiro Hayakawa, Toshiaki Fukunaga 2006-02-14
6901100 Semiconductor laser device in which near-edge portion of upper cladding layer is insulated for preventing current injection Akihiro Mukaiyama, Toshiaki Fukunaga 2005-05-31
6888866 Semiconductor laser device with a current non-injection region near a resonator end face, and fabrication method thereof Fusao Yamanaka, Toshiaki Fukunaga 2005-05-03
6859478 Semiconductor light emitting device in which near-edge portion is filled with doped regrowth layer, and dopant to regrowth layer is diffused into near-edge region of active layer 2005-02-22
6797416 GaN substrate formed under controlled growth condition over GaN layer having discretely formed pits Mitsugu Wada, Toshiaki Fukunaga 2004-09-28
6744797 Semiconductor laser device Toshiaki Fukunaga 2004-06-01
6738403 Semiconductor laser element and semiconductor laser Toshiro Hayakawa, Toshiaki Fukunaga 2004-05-18
6709513 Substrate including wide low-defect region for use in semiconductor element Toshiaki Fukunaga, Mitsugu Wada, Yoshinori Hotta 2004-03-23
6541291 Semiconductor light emitting device in which near-edge portion is filled with doped regrowth layer, and dopant to regrowth layer is diffused into near-edge region of active layer 2003-04-01
6268230 Semiconductor light emitting device 2001-07-31