Issued Patents All Time
Showing 1–13 of 13 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8635986 | Rotation angle sensors | Tsutomu Ikeda, Katsumi Ishida, Makoto MASE, Shuji Yamamoto, Tetsuo Suzuoki | 2014-01-28 |
| 8444904 | Resin gear | Naoto Miyauchi, Yoshiyasu Yasui, Akihiro Kamiya, Hiroki Shimada | 2013-05-21 |
| 7770557 | Throttle body, method of adjusting opening of opener, and method of manufacturing throttle body | Tsutomu Ikeda, Hideki Asano, Mamoru Tateishi, Toshiyuki Masui, Koichi Suzuki +3 more | 2010-08-10 |
| 7716828 | Method of manufacturing throttle body, and throttle body | Naoto Miyauchi, Hiroshi Asanuma, Mikiharu Yoshizaka | 2010-05-18 |
| 7047936 | Throttle bodies and methods of manufacturing such throttle bodies | Koichi Suzuki, Hisashi Kino | 2006-05-23 |
| 5497024 | GaAs MIS device | Akira Shibuya, Kazuo Hattori | 1996-03-05 |
| 5484664 | Hetero-epitaxially grown compound semiconductor substrate | Kuninori Kitahara, Nobuyuki Ohtsuka | 1996-01-16 |
| 5300186 | Hetero-epitaxially grown compound semiconductor substrate and a method of growing the same | Kuninori Kitahara, Nobuyuki Ohtsuka | 1994-04-05 |
| 5296088 | Compound semiconductor crystal growing method | Kunihiko Kodama, Nobuyuki Ohtsuka, Yoshiki Sakuma | 1994-03-22 |
| 5270247 | Atomic layer epitaxy of compound semiconductor | Yoshiki Sakuma, Nobuyuki Ohtuka, Kunihiko Kodama | 1993-12-14 |
| 5166092 | Method of growing compound semiconductor epitaxial layer by atomic layer epitaxy | Kouji Mochizuki, Nobuyuki Ohtsuka | 1992-11-24 |
| 5130269 | Hetero-epitaxially grown compound semiconductor substrate and a method of growing the same | Kuninori Kitahara, Nobuyuki Ohtsuka | 1992-07-14 |
| 4861417 | Method of growing group III-V compound semiconductor epitaxial layer | Kouji Mochizuki, Nobuyuki Ohtsuka | 1989-08-29 |