Issued Patents All Time
Showing 26–50 of 71 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8623732 | Methods of making laterally double diffused metal oxide semiconductor transistors having a reduced surface field structure | Bernhard Grote, Tahir A. Khan, Ronghua Zhu | 2014-01-07 |
| 8384184 | Laterally diffused metal oxide semiconductor device | Tahir A. Khan, Bernhard Grote, Ronghua Zhu | 2013-02-26 |
| 8344472 | Semiconductor device and method | Tahir A. Khan, Weixiao Huang, Ronghua Zhu | 2013-01-01 |
| 8338872 | Electronic device with capcitively coupled floating buried layer | Tahir A. Khan, Ronghua Zhu, Weixiao Huang, Bernhard Grote | 2012-12-25 |
| 8330220 | LDMOS with enhanced safe operating area (SOA) and method therefor | Tahir A. Khan, Ronghua Zhu | 2012-12-11 |
| 8278710 | Guard ring integrated LDMOS | Stephen J. Cosentino, Tahir A. Khan, Adolfo C. Reyes, Ronghua Zhu | 2012-10-02 |
| 8193585 | Semiconductor device with increased snapback voltage | Bernhard Grote, Tahir A. Khan, Weixiao Huang, Ronghua Zhu | 2012-06-05 |
| 8188543 | Electronic device including a conductive structure extending through a buried insulating layer | Todd C. Roggenbauer, Ronghua Zhu, Amitava Bose, Paul Hui, Xiaoqiu Huang | 2012-05-29 |
| 8134222 | MOS capacitor structures | Tahir A. Khan, Amitava Bose, Ronghua Zhu | 2012-03-13 |
| 7851857 | Dual current path LDMOSFET with graded PBL for ultra high voltage smart power applications | Yue Fu, Ronghua Zhu, Amitava Bose, Todd C. Roggenbauer | 2010-12-14 |
| 7851889 | MOSFET device including a source with alternating P-type and N-type regions | Ronghua Zhu, Amitava Bose, Todd C. Roggenbauer | 2010-12-14 |
| 7838383 | Methods for forming MOS capacitors | Tahir A. Khan, Amitava Bose, Ronghua Zhu | 2010-11-23 |
| 7820519 | Process of forming an electronic device including a conductive structure extending through a buried insulating layer | Todd C. Roggenbauer, Ronghua Zhu, Amitava Bose, Paul Hui, Xiaoqiu Huang +1 more | 2010-10-26 |
| 7791161 | Semiconductor devices employing poly-filled trenches | Ronghua Zhu, Amitava Bose | 2010-09-07 |
| 7777257 | Bipolar Schottky diode and method | Amitava Bose, Todd C. Roggenbauer, Ronghua Zhu | 2010-08-17 |
| 7763937 | Variable resurf semiconductor device and method | Amitava Bose, Todd C. Roggenbauer, Ronghua Zhu | 2010-07-27 |
| 7732274 | High voltage deep trench capacitor | Ronghua Zhu, Amitava Bose, Todd C. Roggenbauer | 2010-06-08 |
| 7723204 | Semiconductor device with a multi-plate isolation structure | Amitava Bose, Todd C. Roggenbauer, Ronghua Zhu | 2010-05-25 |
| 7608908 | Robust deep trench isolation | Amitava Bose, Michael C. Butner, Bernhard Grote, Tahir A. Khan, Shifeng Shen +1 more | 2009-10-27 |
| 7550804 | Semiconductor device and method for forming the same | Amitava Bose, Todd C. Roggenbauer, Ronghua Zhu | 2009-06-23 |
| 7511319 | Methods and apparatus for a stepped-drift MOSFET | Ronghua Zhu, Amitava Bose, Todd C. Roggenbauer | 2009-03-31 |
| 7476593 | Semiconductor device and method of forming the same | Ronghua Zhu, Amitava Bose, Vijay Parthasarathy | 2009-01-13 |
| 7466006 | Structure and method for RESURF diodes with a current diverter | Ronghua Zhu, Amitava Bose | 2008-12-16 |
| 7439584 | Structure and method for RESURF LDMOSFET with a current diverter | Amitava Bose, Todd C. Roggenbauer, Ronghua Zhu | 2008-10-21 |
| 7436025 | Termination structures for super junction devices | Ronghua Zhu, Amitava Bose, Todd C. Roggenbauer | 2008-10-14 |