Issued Patents All Time
Showing 1–25 of 103 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12432966 | Shielded gate trench MOSFETs with improved termination structures | — | 2025-09-30 |
| 12328915 | Superfunction MOSFETs having shielded gate trench structures | — | 2025-06-10 |
| 12266726 | Shielded gate trench MOSFETs with improved performance structures | — | 2025-04-01 |
| 12268017 | Shielded gate trench MOSFETs with improved trench terminations and shielded gate trench contacts | — | 2025-04-01 |
| 12230705 | Shielded gate trench MOSFETs with improved trench terminations and shielded gate trench contacts | — | 2025-02-18 |
| 12176397 | Super barrier rectifier with shielded gate electrode and multiple stepped epitaxial structure | — | 2024-12-24 |
| 11777000 | SiC trench MOSFET with low on-resistance and switching loss | — | 2023-10-03 |
| 11600725 | Trench MOSFETs integrated with clamped diodes having trench field plate termination to avoid breakdown voltage degradation | — | 2023-03-07 |
| 11515303 | Shielded gate trench MOSFET with ESD diode manufactured using two poly-silicon layers process | — | 2022-11-29 |
| 11462638 | SiC super junction trench MOSFET | — | 2022-10-04 |
| 11444164 | Shielded gate trench MOSFET having improved specific on-resistance structures | — | 2022-09-13 |
| 11380787 | Shielded gate trench MOSFET integrated with super barrier rectifier having short channel | — | 2022-07-05 |
| 11329155 | Trench MOSFETs integrated with clamped diodes having trench field plate termination to avoid breakdown voltage degradation | — | 2022-05-10 |
| 11114558 | Shielded gate trench MOSFET integrated with super barrier rectifier | — | 2021-09-07 |
| 11018127 | Shielded gate trench MOSFET with ESD diode manufactured using two poly-silicon layers process | — | 2021-05-25 |
| 11004969 | Trench MOSFETs having dummy cells for avalanche capability improvement | — | 2021-05-11 |
| 10930774 | Shielded gate trench MOSFETs with floating trenched gates and channel stop trenched gates in termination | — | 2021-02-23 |
| 9953969 | Semiconductor power device having shielded gate structure and ESD clamp diode manufactured with less mask process | — | 2018-04-24 |
| 9530882 | Trench MOSFET with shielded gate and diffused drift region | — | 2016-12-27 |
| 9530867 | Method for manufacturing a super-junction structures having implanted regions surrounding an N epitaxial layer in deep trench | — | 2016-12-27 |
| 9412810 | Super-junction trench MOSFETs with closed cell layout having shielded gate | — | 2016-08-09 |
| 9337328 | Super-junction trench MOSFETs with closed cell layout | — | 2016-05-10 |
| 9293527 | Super-junction trench MOSFET structure | — | 2016-03-22 |
| 9099320 | Super-junction structures having implanted regions surrounding an N epitaxial layer in deep trench | — | 2015-08-04 |
| 9018701 | Avalanche capability improvement in power semiconductor devices using three masks process | — | 2015-04-28 |