FH

Fu-Yuan Hsieh

FC Force Mos Technology Co.: 84 patents #1 of 12Top 9%
NC Nami Mos Co.: 17 patents #1 of 1Top 100%
UN Unknown: 1 patents #29,356 of 83,584Top 40%
📍 New Taipei, TW: #33 of 10,472 inventorsTop 1%
Overall (All Time): #13,616 of 4,157,543Top 1%
103
Patents All Time

Issued Patents All Time

Showing 26–50 of 103 patents

Patent #TitleCo-InventorsDate
8999789 Super-junction trench MOSFETs with short terminations 2015-04-07
9000515 Super-junction trench MOSFETs with short terminations 2015-04-07
8907415 High switching trench MOSFET 2014-12-09
8889513 Trench MOSFET with trenched floating gates having thick trench bottom oxide as termination 2014-11-18
8889514 Trench MOSFET having a top side drain 2014-11-18
8829607 Fast switching super-junction trench MOSFETs 2014-09-09
8816348 Shielded gate MOSFET-Schottky rectifier-diode integrated circuits with trenched contact structures 2014-08-26
8759910 Trench MOSFET with trenched floating gates having thick trench bottom oxide as termination 2014-06-24
8723317 Trench metal oxide semiconductor field effect transistor with embedded schottky rectifier using reduced masks process 2014-05-13
8722434 Integrated trench MOSFET with trench Schottky rectifier 2014-05-13
8704297 Trench metal oxide semiconductor field effect transistor with multiple trenched source-body contacts for reducing gate charge 2014-04-22
8686468 Semiconductor power device having wide termination trench and self-aligned source regions for mask saving 2014-04-01
8680610 Trench MOSFET having floating dummy cells for avalanche improvement 2014-03-25
8658492 Semiconductor power device integrated with ESD protection diodes 2014-02-25
8653589 Low Qgd trench MOSFET integrated with schottky rectifier 2014-02-18
8653587 Trench MOSFET having a top side drain 2014-02-18
8652900 Trench MOSFET with ultra high cell density and manufacture thereof 2014-02-18
8648413 Super-junction trench MOSFET with multiple trenched source-body contacts 2014-02-11
8643092 Shielded trench MOSFET with multiple trenched floating gates as termination 2014-02-04
8614482 Semiconductor power device having improved termination structure for mask saving 2013-12-24
8598624 Fast switching hybrid IGBT device with trenched contacts 2013-12-03
8587054 Trench MOSFET with resurf stepped oxide and diffused drift region 2013-11-19
8575690 Super-junction trench MOSFET having deep trenches with buried voids 2013-11-05
8569765 MOSFET-Schottky rectifier-diode integrated circuits with trench contact structures 2013-10-29
8569780 Semiconductor power device with embedded diodes and resistors using reduced mask processes 2013-10-29