Issued Patents All Time
Showing 51–75 of 103 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8564054 | Trench semiconductor power device having active cells under gate metal pad | — | 2013-10-22 |
| 8564053 | Trench MOSFET with trenched floating gates in termination | — | 2013-10-22 |
| 8564058 | Super-junction trench MOSFET with multiple trenched gates in unit cell | — | 2013-10-22 |
| 8563381 | Method for manufacturing a power semiconductor device | — | 2013-10-22 |
| 8564047 | Semiconductor power devices integrated with a trenched clamp diode | — | 2013-10-22 |
| 8564052 | Trench MOSFET with trenched floating gates in termination | — | 2013-10-22 |
| 8530313 | Method of manufacturing trench MOSFET structures using three masks process | — | 2013-09-10 |
| 8525255 | Trench MOSFET with trenched floating gates having thick trench bottom oxide as termination | — | 2013-09-03 |
| 8519477 | Trench MOSFET with trenched floating gates and trenched channel stop gates in termination | — | 2013-08-27 |
| 8487372 | Trench MOSFET layout with trenched floating gates and trenched channel stop gates in termination | — | 2013-07-16 |
| 8466514 | Semiconductor power device integrated with improved gate source ESD clamp diodes | — | 2013-06-18 |
| 8426913 | Integrated trench MOSFET with trench Schottky rectifier | — | 2013-04-23 |
| 8384194 | Power semiconductor device comprising a plurality of trench IGBTs | — | 2013-02-26 |
| 8378411 | Power semiconductor devices integrated with clamp diodes having separated gate metal pads to avoid breakdown voltage degradation | — | 2013-02-19 |
| 8378392 | Trench MOSFET with body region having concave-arc shape | — | 2013-02-19 |
| 8373225 | Super-junction trench MOSFET with Resurf stepped oxides and split gate electrodes | — | 2013-02-12 |
| 8372717 | Method for manufacturing a super-junction trench MOSFET with resurf stepped oxides and trenched contacts | — | 2013-02-12 |
| 8373224 | Super-junction trench MOSFET with resurf stepped oxides and trenched contacts | — | 2013-02-12 |
| 8314000 | LDMOS with double LDD and trenched drain | — | 2012-11-20 |
| 8274113 | Trench MOSFET having shielded electrode integrated with trench Schottky rectifier | — | 2012-09-25 |
| 8269273 | Trench MOSFET with etching buffer layer in trench gate | — | 2012-09-18 |
| 8264035 | Avalanche capability improvement in power semiconductor devices | — | 2012-09-11 |
| 8253164 | Fast switching lateral insulated gate bipolar transistor (LIGBT) with trenched contacts | — | 2012-08-28 |
| 8222108 | Method of making a trench MOSFET having improved avalanche capability using three masks process | — | 2012-07-17 |
| 8217422 | Semiconductor devices with gate-source ESD diode and gate-drain clamp diode | — | 2012-07-10 |