Issued Patents All Time
Showing 26–47 of 47 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8785945 | SiC bipolar junction transistor with overgrown emitter | — | 2014-07-22 |
| 8704546 | Method of manufacturing a SiC bipolar junction transistor and SiC bipolar junction transistor thereof | — | 2014-04-22 |
| 8421148 | Grid-UMOSFET with electric field shielding of gate oxide | Christopher Harris, Jan-Olov Svederg | 2013-04-16 |
| 8084813 | Short gate high power MOSFET and method of manufacture | Christopher Harris, Jan-Olov Svederg | 2011-12-27 |
| 7994017 | Method of manufacturing silicon carbide self-aligned epitaxial MOSFET for high powered device applications | Christopher Harris, Kent Bertilsson | 2011-08-09 |
| 7834396 | Lateral field effect transistor and its fabrication comprising a spacer layer above and below the channel layer | Christopher Harris | 2010-11-16 |
| 7646060 | Method and device of field effect transistor including a base shorted to a source region | Christopher Harris | 2010-01-12 |
| 7629616 | Silicon carbide self-aligned epitaxial MOSFET for high powered device applications | Christopher Harris, Kent Bertilsson | 2009-12-08 |
| 7355223 | Vertical junction field effect transistor having an epitaxial gate | Christopher Harris, Cem Basceri | 2008-04-08 |
| 7279368 | Method of manufacturing a vertical junction field effect transistor having an epitaxial gate | Christopher Harris, Cem Basceri | 2007-10-09 |
| 6306773 | Method of producing a semiconductor device of SiC | Christian Adås, Stefan Karlsson, Christopher Harris, Thomas Horman | 2001-10-23 |
| 6278133 | Field effect transistor of SiC for high temperature application, use of such a transistor and a method for production thereof | Christopher Harris, Susan Savage | 2001-08-21 |
| 6252250 | High power impatt diode | Christopher Harris | 2001-06-26 |
| 6127695 | Lateral field effect transistor of SiC, a method for production thereof and a use of such a transistor | Christopher Harris | 2000-10-03 |
| 6100111 | Method for fabricating a silicon carbide device | — | 2000-08-08 |
| 6096627 | Method for introduction of an impurity dopant in SiC, a semiconductor device formed by the method and a use of a highly doped amorphous layer as a source for dopant diffusion into SiC | Christopher Harris, Erik Janzen | 2000-08-01 |
| 5900648 | Semiconductor device having an insulated gate | Christopher Harris, Erik Janzen | 1999-05-04 |
| 5851908 | Method for introduction of an impurity dopant in SiC, a semiconductor device formed by the method and a use of highly doped amorphous layer as a source for dopant diffusion into SiC | Christopher Harris, Erik Janzen | 1998-12-22 |
| 5831292 | IGBT having a vertical channel | Christopher Harris, Erik Janzen | 1998-11-03 |
| 5804482 | Method for producing a semiconductor device having a semiconductor layer of SiC | Erik Janzen | 1998-09-08 |
| 5654208 | Method for producing a semiconductor device having a semiconductor layer of SiC comprising a masking step | Christopher Harris, Erik Janzen | 1997-08-05 |
| 5650638 | Semiconductor device having a passivation layer | Christopher Harris, Erik Janzen | 1997-07-22 |